FGY75N60SMD

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - IGBTs - Single

Power - Max :

750W

Packaging :

Tube

Additional Feature :

LOW CONDUCTION LOSS

Turn Off Time-Nom (toff) :

161 ns

Polarity/Channel Type :

N-Channel

Test Condition :

400V, 75A, 3 Ω, 15V

Gate Charge :

248nC

Published :

2010

Collector Emitter Breakdown Voltage :

600V

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 8 hours ago)

Input Type :

Standard

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

1.9V

Pbfree Code :

yes

Mounting Type :

Through Hole

Height :

20.32mm

Package / Case :

TO-247-3 Variant

Factory Lead Time :

6 Weeks

ECCN Code :

EAR99

Turn On Time :

76 ns

Length :

15.87mm

IGBT Type :

Field Stop

Current - Collector Pulsed (Icm) :

225A

Gate-Emitter Voltage-Max :

20V

Number of Elements :

1

Switching Energy :

2.3mJ (on), 770μJ (off)

Transistor Application :

POWER CONTROL

Width :

4.82mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Element Configuration :

Single

Number of Pins :

3

Reverse Recovery Time :

55 ns

Mount :

Through Hole

Fall Time-Max (tf) :

29ns

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 75A

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

600V

Td (on/off) @ 25°C :

24ns/136ns

Gate-Emitter Thr Voltage-Max :

6.5V

HTS Code :

8541.29.00.95

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

750W

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Max Collector Current :

150A

Weight :

7.629g

Number of Terminations :

3