FGP10N60UNDF

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Collector Emitter Voltage (VCEO) :

600V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Packaging :

Tube

Pbfree Code :

yes

Height :

16.51mm

Current - Collector Pulsed (Icm) :

30A

JESD-609 Code :

e3

IGBT Type :

NPT

Terminal Finish :

Tin (Sn)

Gate Charge :

37nC

Length :

10.67mm

Gate-Emitter Thr Voltage-Max :

8.5V

Lead Free :

Lead Free

Mount :

Through Hole

Gate-Emitter Voltage-Max :

20V

Fall Time-Max (tf) :

24.8ns

Max Collector Current :

20A

HTS Code :

8541.29.00.95

Number of Pins :

3

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Turn-Off Delay Time :

55 ns

ECCN Code :

EAR99

Radiation Hardening :

No

Input Type :

Standard

Polarity/Channel Type :

N-Channel

Turn On Time :

15.4 ns

Published :

2013

Power Dissipation :

139W

Transistor Application :

Motor Control

Td (on/off) @ 25°C :

8ns/52.2ns

Switching Energy :

150μJ (on), 50μJ (off)

Test Condition :

400V, 10A, 10 Ω, 15V

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Collector Emitter Saturation Voltage :

2.3V

Width :

4.83mm

Turn Off Time-Nom (toff) :

89.3 ns

Vce(on) (Max) @ Vge, Ic :

2.45V @ 15V, 10A

Collector Emitter Breakdown Voltage :

600V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

8.1 ns

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reverse Recovery Time :

37.7 ns

Transistor Element Material :

SILICON

Weight :

1.8g

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

139W

Factory Lead Time :

4 Weeks

Number of Terminations :

3