FGD3N60LSDTM
- Mfr.Part #
- FGD3N60LSDTM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT 600V 6A 40W DPAK
- Stock
- 27,747
- In Stock :
- 27,747
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Max Collector Current :
- 6A
- Width :
- 6.1mm
- Number of Pins :
- 3
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 6 Weeks
- Gate-Emitter Voltage-Max :
- 20V
- JESD-609 Code :
- e3
- Height :
- 2.3mm
- Max Power Dissipation :
- 40W
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Turn Off Time-Nom (toff) :
- 1420 ns
- Gate Charge :
- 12.5nC
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Test Condition :
- 480V, 3A, 470 Ω, 10V
- Turn On Time :
- 85 ns
- Terminal Form :
- Gull wing
- Base Part Number :
- FGD3N60
- Max Operating Temperature :
- 150°C
- Length :
- 6.6mm
- Pbfree Code :
- yes
- HTS Code :
- 8541.29.00.95
- Published :
- 2004
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Min Operating Temperature :
- -55°C
- Transistor Application :
- Motor Control
- Collector Emitter Breakdown Voltage :
- 600V
- Switching Energy :
- 250μJ (on), 1mJ (off)
- Gate-Emitter Thr Voltage-Max :
- 5V
- JESD-30 Code :
- R-PSSO-G2
- Current Rating :
- 6A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- LOW CONDUCTION LOSS
- Input Type :
- Standard
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 600V
- Max Breakdown Voltage :
- 600V
- Weight :
- 260.37mg
- Td (on/off) @ 25°C :
- 40ns/600ns
- Reverse Recovery Time :
- 234 ns
- Current - Collector Pulsed (Icm) :
- 25A
- Voltage - Rated DC :
- 600V
- Vce(on) (Max) @ Vge, Ic :
- 1.5V @ 10V, 3A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Datasheets
- FGD3N60LSDTM

FGD3N60LSDTM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGD3N60LSDTM Description
ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.
FGD3N60LSDTM Features
-
High Current Capability
-
Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A
-
High Input Impedance
-
ROHS3 Compliant
-
Lead Free
-
No Radiation Hardening
FGD3N60LSDTM Applications
-
HID Lamp Applications
-
Piezo Fuel Injection Applications
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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