FGB7N60UNDF

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 7A

HTS Code :

8541.29.00.95

Factory Lead Time :

5 Weeks

Pbfree Code :

yes

Transistor Application :

Motor Control

Reverse Recovery Time :

32.3 ns

Published :

2013

Lead Free :

Lead Free

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Collector Pulsed (Icm) :

21A

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

600V

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

600V

Height :

4.83mm

Number of Terminations :

2

Td (on/off) @ 25°C :

5.9ns/32.3ns

Transistor Element Material :

SILICON

Gate-Emitter Thr Voltage-Max :

8.5V

RoHS Status :

ROHS3 Compliant

Gate Charge :

18nC

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Element Configuration :

Single

Number of Pins :

3

Switching Energy :

99μJ (on), 104μJ (off)

Power - Max :

83W

Case Connection :

COLLECTOR

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Length :

10.67mm

Gate-Emitter Voltage-Max :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

2.1V

Mount :

Surface Mount

Number of Elements :

1

Width :

9.65mm

IGBT Type :

NPT

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Max Collector Current :

14A

Fall Time-Max (tf) :

89ns

Weight :

1.31247g

Polarity/Channel Type :

N-Channel

Turn Off Time-Nom (toff) :

146.8 ns

Turn On Time :

10.3 ns

Max Power Dissipation :

83W

Test Condition :

400V, 7A, 10 Ω, 15V

Terminal Form :

Gull wing

Input Type :

Standard