FGAF20N60SMD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

IGBT Type :

Field Stop

HTS Code :

8541.29.00.95

Max Power Dissipation :

75W

Factory Lead Time :

7 Weeks

Length :

15.7mm

Mounting Type :

Through Hole

Fall Time-Max (tf) :

27ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Vce(on) (Max) @ Vge, Ic :

1.7V @ 15V, 20A

Number of Elements :

1

Power - Max :

75W

Current - Collector Pulsed (Icm) :

60A

Polarity/Channel Type :

N-Channel

Test Condition :

400V, 20A, 10 Ω, 15V

Collector Emitter Breakdown Voltage :

600V

Packaging :

Tube

Element Configuration :

Single

Max Collector Current :

40A

Case Connection :

Isolated

Operating Temperature :

-55°C~175°C TJ

Published :

2013

Mount :

Through Hole

JESD-609 Code :

e3

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

600V

Turn On Time :

31 ns

Height :

26.7mm

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Input Type :

Standard

Gate Charge :

64nC

Collector Emitter Saturation Voltage :

1.9V

Transistor Element Material :

SILICON

Weight :

6.962g

Terminal Finish :

Tin (Sn)

Gate-Emitter Thr Voltage-Max :

6V

Package / Case :

TO-3P-3 Full Pack

Reverse Recovery Time :

26.7 ns

Turn Off Time-Nom (toff) :

109 ns

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate-Emitter Voltage-Max :

20V

Width :

3.2mm

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Transistor Application :

Motor Control

Td (on/off) @ 25°C :

12ns/91ns

Switching Energy :

452μJ (on), 141μJ (off)