FGA40N65SMD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Lead Free :

Lead Free

HTS Code :

8541.29.00.95

Collector Emitter Voltage (VCEO) :

650V

Mounting Type :

Through Hole

Number of Elements :

1

Number of Terminations :

3

Fall Time-Max (tf) :

17ns

Transistor Application :

POWER CONTROL

Additional Feature :

LOW CONDUCTION LOSS

Power Dissipation :

349W

Input Type :

Standard

Height :

20.1mm

Turn On Delay Time :

12 ns

Packaging :

Tube

Weight :

6.401g

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 40A

Contact Plating :

Tin

Width :

5mm

Mount :

Through Hole

Test Condition :

400V, 40A, 6 Ω, 15V

Published :

2008

JESD-609 Code :

e3

Package / Case :

TO-3P-3, SC-65-3

Element Configuration :

Single

Max Collector Current :

80A

Operating Temperature :

-55°C~175°C TJ

Length :

16.2mm

Factory Lead Time :

6 Weeks

Switching Energy :

820μJ (on), 260μJ (off)

Radiation Hardening :

No

Gate-Emitter Voltage-Max :

20V

Rise Time-Max :

28ns

Number of Pins :

3

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

650V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

2.5V

IGBT Type :

Field Stop

Turn-Off Delay Time :

92 ns

Transistor Element Material :

SILICON

Reverse Recovery Time :

42 ns

Td (on/off) @ 25°C :

12ns/92ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Gate Charge :

119nC

Gate-Emitter Thr Voltage-Max :

6V

Max Power Dissipation :

349W

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

120A