FGA40N65SMD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Collector Emitter Breakdown Voltage :

650V

Test Condition :

400V, 40A, 6 Ω, 15V

Max Power Dissipation :

349W

Width :

5mm

Weight :

6.401g

ECCN Code :

EAR99

Gate Charge :

119nC

Contact Plating :

Tin

Number of Pins :

3

Turn On Delay Time :

12 ns

JESD-609 Code :

e3

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Max Collector Current :

80A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time-Max :

28ns

IGBT Type :

Field Stop

RoHS Status :

ROHS3 Compliant

Power Dissipation :

349W

Polarity/Channel Type :

N-Channel

Fall Time-Max (tf) :

17ns

Mount :

Through Hole

Published :

2008

Transistor Element Material :

SILICON

Turn-Off Delay Time :

92 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Gate-Emitter Thr Voltage-Max :

6V

Number of Elements :

1

Length :

16.2mm

Transistor Application :

POWER CONTROL

Reverse Recovery Time :

42 ns

Collector Emitter Saturation Voltage :

2.5V

Package / Case :

TO-3P-3, SC-65-3

Element Configuration :

Single

Input Type :

Standard

Lead Free :

Lead Free

Switching Energy :

820μJ (on), 260μJ (off)

Current - Collector Pulsed (Icm) :

120A

Packaging :

Tube

Factory Lead Time :

6 Weeks

Td (on/off) @ 25°C :

12ns/92ns

Pbfree Code :

yes

HTS Code :

8541.29.00.95

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 40A

Collector Emitter Voltage (VCEO) :

650V

Radiation Hardening :

No

Height :

20.1mm

Mounting Type :

Through Hole

Additional Feature :

LOW CONDUCTION LOSS

Gate-Emitter Voltage-Max :

20V