FFB5551

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Breakdown Voltage :

160V

Max Breakdown Voltage :

160V

Transistor Element Material :

SILICON

Current Rating :

200mA

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Frequency :

300MHz

Width :

1.25mm

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

50nA ICBO

Gain Bandwidth Product :

300MHz

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Base Part Number :

FFB5551

Max Collector Current :

200mA

Lead Free :

Lead Free

Element Configuration :

Dual

Collector Base Voltage (VCBO) :

180V

Weight :

28mg

Polarity :

NPN

Height :

1mm

Transistor Application :

AMPLIFIER

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Radiation Hardening :

No

Power Dissipation :

200mW

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Package / Case :

6-TSSOP, SC-88, SOT-363

Length :

2mm

JESD-609 Code :

e3

Voltage - Rated DC :

160V

Collector Emitter Voltage (VCEO) :

160V

Transistor Type :

2 NPN (Dual)

Collector Emitter Saturation Voltage :

200mV

Max Power Dissipation :

200mW

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Number of Terminations :

6

Emitter Base Voltage (VEBO) :

6V

Transition Frequency :

100MHz

Terminal Form :

Gull wing

Number of Elements :

2

hFE Min :

80

Mount :

Surface Mount