FFB5551

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Height :

1mm

Number of Terminations :

6

Current - Collector Cutoff (Max) :

50nA ICBO

Weight :

28mg

Max Collector Current :

200mA

Radiation Hardening :

No

Base Part Number :

FFB5551

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Voltage - Rated DC :

160V

Transistor Element Material :

SILICON

Max Power Dissipation :

200mW

ECCN Code :

EAR99

Number of Pins :

6

Pbfree Code :

yes

Power Dissipation :

200mW

Collector Emitter Breakdown Voltage :

160V

Lead Free :

Lead Free

Terminal Form :

Gull wing

Max Breakdown Voltage :

160V

Collector Base Voltage (VCBO) :

180V

Number of Elements :

2

Transition Frequency :

100MHz

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

JESD-609 Code :

e3

Gain Bandwidth Product :

300MHz

Transistor Type :

2 NPN (Dual)

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Frequency :

300MHz

Collector Emitter Saturation Voltage :

200mV

Width :

1.25mm

Packaging :

Tape and Reel (TR)

Current Rating :

200mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2mm

Transistor Application :

AMPLIFIER

Emitter Base Voltage (VEBO) :

6V

hFE Min :

80

Collector Emitter Voltage (VCEO) :

160V

Package / Case :

6-TSSOP, SC-88, SOT-363

Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)