FDZ663P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

4.8 ns

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Vgs (Max) :

±8V

Drain to Source Breakdown Voltage :

-20V

Package / Case :

4-XFBGA, WLCSP

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

2.7A

Gate to Source Voltage (Vgs) :

8V

Mounting Type :

Surface Mount

Number of Pins :

4

Rise Time :

6.2ns

Power Dissipation :

1.3W

Series :

PowerTrench®

JESD-609 Code :

e1

Length :

800μm

Height :

150μm

Width :

800μm

Feedback Cap-Max (Crss) :

80 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

20V

Turn-Off Delay Time :

67 ns

ECCN Code :

EAR99

Power Dissipation-Max :

1.3W Ta

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Terminal Form :

Ball

Weight :

67mg

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta

Rds On (Max) @ Id, Vgs :

134m Ω @ 2A, 4.5V

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Number of Terminations :

4

Mount :

Surface Mount

Terminal Position :

BOTTOM

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

525pF @ 10V

Radiation Hardening :

No

Element Configuration :

Single

Fall Time (Typ) :

32 ns

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 4.5V