FDZ661PZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.3W Ta

Continuous Drain Current (ID) :

2.6A

Height :

150μm

Gate Charge (Qg) (Max) @ Vgs :

8.8nC @ 4.5V

Radiation Hardening :

No

Pbfree Code :

yes

Fall Time (Typ) :

33 ns

Series :

PowerTrench®

Weight :

67mg

Gate to Source Voltage (Vgs) :

8V

JESD-609 Code :

e1

Terminal Form :

Ball

Turn-Off Delay Time :

68 ns

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

140m Ω @ 2A, 4.5V

Lead Free :

Lead Free

Number of Elements :

1

Feedback Cap-Max (Crss) :

70 pF

Input Capacitance (Ciss) (Max) @ Vds :

555pF @ 10V

Mount :

Surface Mount

Transistor Element Material :

SILICON

Vgs (Max) :

±8V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

BOTTOM

Factory Lead Time :

10 Weeks

Mounting Type :

Surface Mount

Length :

800μm

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Number of Terminations :

4

Rise Time :

6.3ns

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-20V

Package / Case :

4-XFBGA, WLCSP

Number of Pins :

4

Width :

800μm

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Turn On Delay Time :

4.9 ns

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Power Dissipation :

1.3W

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006