FDZ3N513ZT

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

700 mV

Drive Voltage (Max Rds On,Min Rds On) :

3.2V 4.5V

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Mounting Type :

Surface Mount

Terminal Form :

Ball

Number of Elements :

1

Turn On Delay Time :

3.1 ns

Continuous Drain Current (ID) :

1.1A

Max Repetitive Reverse Voltage (Vrrm) :

25V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

85pF @ 15V

Width :

1mm

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Radiation Hardening :

No

JESD-609 Code :

e1

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

4

Element Configuration :

Single

FET Feature :

Schottky Diode (Body)

Package / Case :

4-UFBGA, WLCSP

Threshold Voltage :

700mV

Turn-Off Delay Time :

9.6 ns

Operating Temperature :

-55°C~125°C TJ

Weight :

42mg

Gate to Source Voltage (Vgs) :

5.5V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 3 days ago)

Number of Pins :

4

Vgs (Max) :

+5.5V, -0.3V

Mount :

Surface Mount

Height :

332μm

Additional Feature :

ESD Protection

Peak Reverse Current :

300μA

Terminal Position :

BOTTOM

Reverse Recovery Time :

29 ns

Rds On (Max) @ Id, Vgs :

462m Ω @ 300mA, 4.5V

Forward Current :

1.1A

Drain-source On Resistance-Max :

0.52Ohm

Transistor Element Material :

SILICON

Length :

1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1W Ta

Operating Mode :

Depletion Mode

Published :

2016

Feedback Cap-Max (Crss) :

25 pF

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 4.5V

Power Dissipation :

1W

Rise Time :

1.9ns

REACH SVHC :

No SVHC

Fall Time (Typ) :

2.7 ns

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

FET Type :

N-Channel