FDZ3N513ZT
- Mfr.Part #
- FDZ3N513ZT
- Manufacturer
- onsemi
- Package / Case
- 4-UFBGA, WLCSP
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 1.1A 4WLCSP
- Stock
- 3,000
- In Stock :
- 3,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 1.1A Ta
- RoHS Status :
- RoHS Compliant
- Vgs (Max) :
- +5.5V, -0.3V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Terminal Form :
- Ball
- Gate Charge (Qg) (Max) @ Vgs :
- 1nC @ 4.5V
- Power Dissipation :
- 1W
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Turn On Delay Time :
- 3.1 ns
- Element Configuration :
- Single
- JESD-609 Code :
- e1
- Number of Pins :
- 4
- Additional Feature :
- ESD Protection
- Number of Terminations :
- 4
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 9.6 ns
- Max Repetitive Reverse Voltage (Vrrm) :
- 25V
- Weight :
- 42mg
- Gate to Source Voltage (Vgs) :
- 5.5V
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Forward Current :
- 1.1A
- Peak Reverse Current :
- 300μA
- Drain to Source Breakdown Voltage :
- 30V
- Width :
- 1mm
- Rds On (Max) @ Id, Vgs :
- 462m Ω @ 300mA, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 85pF @ 15V
- Height :
- 332μm
- Rise Time :
- 1.9ns
- Continuous Drain Current (ID) :
- 1.1A
- Operating Temperature :
- -55°C~125°C TJ
- Drain-source On Resistance-Max :
- 0.52Ohm
- Operating Mode :
- Depletion Mode
- Radiation Hardening :
- No
- Published :
- 2016
- Reverse Recovery Time :
- 29 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 3.2V 4.5V
- Fall Time (Typ) :
- 2.7 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 1W Ta
- Nominal Vgs :
- 700 mV
- Terminal Position :
- BOTTOM
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Mount :
- Surface Mount
- FET Feature :
- Schottky Diode (Body)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Threshold Voltage :
- 700mV
- Length :
- 1mm
- FET Type :
- N-Channel
- Feedback Cap-Max (Crss) :
- 25 pF
- Package / Case :
- 4-UFBGA, WLCSP
- Datasheets
- FDZ3N513ZT

N-Channel Tape & Reel (TR) 462m Ω @ 300mA, 4.5V +5.5V, -0.3V 85pF @ 15V 1nC @ 4.5V 4-UFBGA, WLCSP
FDZ3N513ZT Overview
The maximum input capacitance of this device is 85pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.1A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 9.6 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 3.1 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 700mV volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (3.2V 4.5V), this device helps reduce its power consumption.
FDZ3N513ZT Features
a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 9.6 ns
a threshold voltage of 700mV
FDZ3N513ZT Applications
There are a lot of ON Semiconductor
FDZ3N513ZT applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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