FDU3N40TU

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Mfr.Part #
FDU3N40TU
Manufacturer
Fairchild Semiconductor
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 2
Stock
43,880
In Stock :
43,880

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
Power Dissipation-Max :
30W Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e3
Number of Elements :
1
Transistor Element Material :
SILICON
Additional Feature :
FAST SWITCHING
Vgs (Max) :
±30V
Published :
2013
Packaging :
Tube
Avalanche Energy Rating (Eas) :
46 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Drain Current-Max (Abs) (ID) :
2A
Terminal Finish :
Tin (Sn)
Qualification Status :
Not Qualified
Pbfree Code :
yes
Number of Pins :
3
Mount :
Through Hole
Series :
UniFET™
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
6nC @ 10V
Height :
7.57mm
Length :
6.8mm
Power Dissipation :
30W
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
4 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
8A
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
ECCN Code :
EAR99
Resistance :
3.4Ohm
Element Configuration :
Single
Weight :
343.08mg
Lead Free :
Lead Free
Rise Time :
30ns
Turn-Off Delay Time :
10 ns
Operating Mode :
ENHANCEMENT MODE
Width :
2.5mm
Turn On Delay Time :
10 ns
Lifecycle Status :
ACTIVE (Last Updated: 14 hours ago)
Vgs(th) (Max) @ Id :
5V @ 250μA
Drain to Source Breakdown Voltage :
400V
Continuous Drain Current (ID) :
2A
Rds On (Max) @ Id, Vgs :
3.4 Ω @ 1A, 10V
Fall Time (Typ) :
25 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Input Capacitance (Ciss) (Max) @ Vds :
225pF @ 25V
Reach Compliance Code :
not_compliant
Gate to Source Voltage (Vgs) :
30V
Datasheets
FDU3N40TU
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDU3N40TU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, FDU3N40TU pinout, FDU3N40TU datasheet PDF, FDU3N40TU amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDU3N40TU ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDU3N40TU


N-Channel Tube 3.4 Ω @ 1A, 10V ±30V 225pF @ 25V 6nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

FDU3N40TU Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 46 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 225pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2A amps.In this device, the drain-source breakdown voltage is 400V and VGS=400V, so the drain-source breakdown voltage is 400V in this case.A device can conduct a maximum continuous current of [2A] according to its drain current.It is [10 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 8A.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

FDU3N40TU Features


the avalanche energy rating (Eas) is 46 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 10 ns
based on its rated peak drain current 8A.


FDU3N40TU Applications


There are a lot of ON Semiconductor
FDU3N40TU applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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