FDU3580
- Mfr.Part #
- FDU3580
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 7.7A I-PAK
- Stock
- 23,744
- In Stock :
- 23,744
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- PowerTrench®
- Terminal Finish :
- MATTE TIN
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.76pF @ 40V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- JESD-30 Code :
- R-PSIP-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Drain to Source Voltage (Vdss) :
- 80V
- Drain-source On Resistance-Max :
- 0.029Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 29m Ω @ 7.7A, 10V
- Drain Current-Max (Abs) (ID) :
- 7.7A
- Number of Terminations :
- 3
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 7.7A Ta
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 50A
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 3.8W Ta 42W Tc
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Number of Elements :
- 1
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 79nC @ 10V
- Avalanche Energy Rating (Eas) :
- 245 mJ
- Qualification Status :
- COMMERCIAL
- DS Breakdown Voltage-Min :
- 80V
- Datasheets
- FDU3580

N-Channel Tube 29m Ω @ 7.7A, 10V ±20V 1.76pF @ 40V 79nC @ 10V 80V TO-251-3 Short Leads, IPak, TO-251AA
FDU3580 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 245 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1.76pF @ 40V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 7.7A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 80V in order to maintain normal operation.Operating this transistor requires a 80V drain to source voltage (Vdss).By using drive voltage (6V 10V), this device helps reduce its overall power consumption.
FDU3580 Features
the avalanche energy rating (Eas) is 245 mJ
based on its rated peak drain current 50A.
a 80V drain to source voltage (Vdss)
FDU3580 Applications
There are a lot of Rochester Electronics, LLC
FDU3580 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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