FDU3580

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Mfr.Part #
FDU3580
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 80V 7.7A I-PAK
Stock
23,744
In Stock :
23,744

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Series :
PowerTrench®
Terminal Finish :
MATTE TIN
Vgs(th) (Max) @ Id :
4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds :
1.76pF @ 40V
Mounting Type :
Through Hole
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
JESD-30 Code :
R-PSIP-T3
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Drain to Source Voltage (Vdss) :
80V
Drain-source On Resistance-Max :
0.029Ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
29m Ω @ 7.7A, 10V
Drain Current-Max (Abs) (ID) :
7.7A
Number of Terminations :
3
Surface Mount :
No
Current - Continuous Drain (Id) @ 25°C :
7.7A Ta
Terminal Position :
Single
RoHS Status :
ROHS3 Compliant
Pulsed Drain Current-Max (IDM) :
50A
Operating Temperature :
-55°C~175°C TJ
Vgs (Max) :
±20V
Power Dissipation-Max :
3.8W Ta 42W Tc
Peak Reflow Temperature (Cel) :
Not Applicable
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Transistor Element Material :
SILICON
Pin Count :
3
Number of Elements :
1
FET Type :
N-Channel
JESD-609 Code :
e3
Pbfree Code :
yes
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
79nC @ 10V
Avalanche Energy Rating (Eas) :
245 mJ
Qualification Status :
COMMERCIAL
DS Breakdown Voltage-Min :
80V
Datasheets
FDU3580
Introducing Transistors - FETs, MOSFETs - Single onsemi FDU3580 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, FDU3580 pinout, FDU3580 datasheet PDF, FDU3580 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDU3580 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDU3580


N-Channel Tube 29m Ω @ 7.7A, 10V ±20V 1.76pF @ 40V 79nC @ 10V 80V TO-251-3 Short Leads, IPak, TO-251AA

FDU3580 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 245 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1.76pF @ 40V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 7.7A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 80V in order to maintain normal operation.Operating this transistor requires a 80V drain to source voltage (Vdss).By using drive voltage (6V 10V), this device helps reduce its overall power consumption.

FDU3580 Features


the avalanche energy rating (Eas) is 245 mJ
based on its rated peak drain current 50A.
a 80V drain to source voltage (Vdss)


FDU3580 Applications


There are a lot of Rochester Electronics, LLC
FDU3580 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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