FDSS2407
- Mfr.Part #
- FDSS2407
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 62V 3.3A 8SOIC
- Stock
- 11,253
- In Stock :
- 11,253
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Pbfree Code :
- yes
- Rise Time :
- 1.2μs
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 3.3A, 10V
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 15V
- Drain Current-Max (Abs) (ID) :
- 3A
- FET Feature :
- Logic Level Gate
- Drain-source On Resistance-Max :
- 0.11Ohm
- Height :
- 1.575mm
- Transistor Element Material :
- SILICON
- Published :
- 2004
- Length :
- 4.9mm
- Weight :
- 230.4mg
- Avalanche Energy Rating (Eas) :
- 140 mJ
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 62V
- Number of Terminations :
- 8
- Power Dissipation :
- 2.27W
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- Automotive, AEC-Q101, PowerTrench®
- Continuous Drain Current (ID) :
- 3.3A
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Width :
- 3.9mm
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Dual
- Base Part Number :
- FDSS2407
- Drain to Source Breakdown Voltage :
- 62V
- Max Power Dissipation :
- 2.27W
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Fall Time (Typ) :
- 3.5 μs
- Number of Elements :
- 2
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- FET Type :
- 2 N-Channel (Dual)
- Factory Lead Time :
- 5 Weeks
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 4.3nC @ 5V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn On Delay Time :
- 630 ns
- Turn-Off Delay Time :
- 8.7 μs
- Number of Pins :
- 8
- Datasheets
- FDSS2407

FDSS2407 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDSS2407 Description
Compared with the traditional power MOSFET, this dual N-channel MOSFET provides additional functions. They are Drain-to-source voltage feedback signal, and Two . Previously, the gate driver of the external discrete circuit was required to disable the control function.
Including these features in MOSFET saves space on printed circuit boards. As long as the drain-to-source voltage is higher than 62V, the drain-to-source voltage feedback function can provide 5V level output. This can monitor the time it takes for a perceptual load to deplete its stored energy. A plurality of feedback signals can be connected to one input of the monitoring circuit.
The gate disable function allows the device to be turned off independent of the drive signal on the gate. This function allows the second control circuit to deactivate the load if necessary. It can also be connected to "OR", allowing multiple devices to be controlled by a single open collector / drain control transistor.
FDSS2407 Features
62V, 132m, 5V Logic Level Gate Dual MOSFET in SO-8
5V Logic Level feedback signal of the drain to sourcevoltage
Multiple devices can be wired "OR'd" to a single monitoring circuit input
Gate Drive Disable Input
Multiple devices controllable bya single disable transistor
Qualified to AEC Q101
FDSS2407 Applications
Power Train
Automotive Injector Driver
Solenoid Driver
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