FDS6699S
- Mfr.Part #
- FDS6699S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 41,269
- In Stock :
- 41,269
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 38 ns
- Factory Lead Time :
- 18 Weeks
- Length :
- 5mm
- Gate Charge (Qg) (Max) @ Vgs :
- 91nC @ 10V
- Nominal Vgs :
- 1.4 V
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Threshold Voltage :
- 1.4V
- Weight :
- 130mg
- Contact Plating :
- Tin
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 21A
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 3.6mOhm
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 3.6m Ω @ 21A, 10V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Rise Time :
- 12ns
- Current Rating :
- 21A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Lead Free :
- Lead Free
- Number of Pins :
- 8
- Power Dissipation-Max :
- 2.5W Ta
- Mount :
- Surface Mount
- Turn On Delay Time :
- 11 ns
- Dual Supply Voltage :
- 30V
- Published :
- 2005
- Number of Terminations :
- 8
- Transistor Application :
- SWITCHING
- Termination :
- SMD/SMT
- Terminal Position :
- Dual
- Turn-Off Delay Time :
- 73 ns
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Voltage - Rated DC :
- 30V
- Height :
- 1.5mm
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta
- Power Dissipation :
- 2.5mW
- Series :
- PowerTrench®, SyncFET™
- Width :
- 4mm
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 3610pF @ 15V
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FDS6699S
FDS6699S Documents

N-Channel Tape & Reel (TR) 3.6m Ω @ 21A, 10V ±20V 3610pF @ 15V 91nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS6699S Description
The FDS6699S is designed to replace one SO-8 MOSFET and Schottky diode in synchronized DC-DC power supplies. In order to maximize power conversion efficiency, this MOSFET has been designed to have a very low RDS(ON) and a very low gate charge. It contains an integrated Schottky diode that is constructed using monolithic SyncFET technology.
FDS6699S Features
-
21A, 30V
-
RDS(ON) = 3.6 mΩ @ VGS = 10V
-
RDS(ON) = 4.5 mΩ @ VGS = 4.5V
-
Includes SyncFET Schottky body diode
-
High-performance trench technology for extremely low RDS(ON) and fast switching
-
High power and current handling capability
-
100% RG (Gate Resistance) tested
FDS6699S Applications
-
Notebook Vcore low-side switch
-
Point of Load Low Side Switch
-
This product is general usage and suitable for many different applications.
-
Synchronous Rectifier for DC/DC Converters
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