FDS6699S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

2.5mW

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 10V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

11 ns

Termination :

SMD/SMT

Fall Time (Typ) :

38 ns

Contact Plating :

Tin

Rise Time :

12ns

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

1.4V

Dual Supply Voltage :

30V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

3610pF @ 15V

Radiation Hardening :

No

Nominal Vgs :

1.4 V

Mount :

Surface Mount

Continuous Drain Current (ID) :

21A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Lead Free :

Lead Free

Number of Pins :

8

Length :

5mm

Current - Continuous Drain (Id) @ 25°C :

21A Ta

Number of Terminations :

8

Width :

4mm

FET Type :

N-Channel

Pbfree Code :

yes

ECCN Code :

EAR99

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 21A, 10V

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 1mA

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

18 Weeks

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Resistance :

3.6mOhm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn-Off Delay Time :

73 ns

Voltage - Rated DC :

30V

Current Rating :

21A

Power Dissipation-Max :

2.5W Ta

Series :

PowerTrench®, SyncFET™

Published :

2005

Weight :

130mg

Height :

1.5mm

Drain to Source Breakdown Voltage :

30V