FDS6699S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

1.4 V

Turn On Delay Time :

11 ns

Power Dissipation :

2.5mW

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Weight :

130mg

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

N-Channel

Termination :

SMD/SMT

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

21A Ta

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 21A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

ECCN Code :

EAR99

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Current Rating :

21A

Fall Time (Typ) :

38 ns

Pbfree Code :

yes

Dual Supply Voltage :

30V

Rise Time :

12ns

Vgs (Max) :

±20V

Series :

PowerTrench®, SyncFET™

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

3610pF @ 15V

REACH SVHC :

No SVHC

Threshold Voltage :

1.4V

Continuous Drain Current (ID) :

21A

Vgs(th) (Max) @ Id :

3V @ 1mA

Number of Elements :

1

Factory Lead Time :

18 Weeks

JESD-609 Code :

e3

Published :

2005

Turn-Off Delay Time :

73 ns

Number of Pins :

8

Radiation Hardening :

No

Transistor Application :

SWITCHING

Width :

4mm

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Resistance :

3.6mOhm

Height :

1.5mm

Mount :

Surface Mount

Lead Free :

Lead Free

Terminal Form :

Gull wing

Length :

5mm

Voltage - Rated DC :

30V

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Ta

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V