FDS6694
- Mfr.Part #
- FDS6694
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 12A 8SOIC
- Stock
- 35,872
- In Stock :
- 35,872
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 30V
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Number of Terminations :
- 8
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Elements :
- 1
- Pin Count :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.293pF @ 15V
- Series :
- PowerTrench®
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PDSO-G8
- Drain-source On Resistance-Max :
- 0.011Ohm
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 12A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drain Current-Max (Abs) (ID) :
- 12A
- Drain to Source Voltage (Vdss) :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation-Max :
- 2.5W Ta
- Terminal Finish :
- MATTE TIN
- Qualification Status :
- COMMERCIAL
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Form :
- Gull wing
- Datasheets
- FDS6694

N-Channel Tape & Reel (TR) 11m Ω @ 12A, 10V ±20V 1.293pF @ 15V 19nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
FDS6694 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1.293pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 12A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
FDS6694 Features
a 30V drain to source voltage (Vdss)
FDS6694 Applications
There are a lot of Rochester Electronics, LLC
FDS6694 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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