FDS6692A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

11.5m Ω @ 9A, 10V

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Input Capacitance (Ciss) (Max) @ Vds :

1610pF @ 15V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Contact Plating :

Tin

JESD-609 Code :

e4

Width :

3.9mm

Mount :

Surface Mount

Factory Lead Time :

18 Weeks

Height :

1.575mm

Turn-Off Delay Time :

33 ns

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Power Dissipation-Max :

1.47W Ta

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Published :

2001

Turn On Delay Time :

8 ns

Weight :

130mg

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain to Source Breakdown Voltage :

30V

Pbfree Code :

yes

Number of Terminations :

8

Mounting Type :

Surface Mount

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Length :

4.9mm

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Threshold Voltage :

1.2V

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Resistance :

11.5mOhm

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Number of Elements :

1

Continuous Drain Current (ID) :

9A

Terminal Form :

Gull wing

Number of Pins :

8

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Series :

PowerTrench®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

32 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Element Material :

SILICON

Rise Time :

32ns

Drain Current-Max (Abs) (ID) :

9A

Terminal Position :

Dual

Power Dissipation :

1.47W

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

79 mJ

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)