FDS6692A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Fall Time (Typ) :

32 ns

Number of Elements :

1

Terminal Form :

Gull wing

Series :

PowerTrench®

Contact Plating :

Tin

Rise Time :

32ns

Factory Lead Time :

18 Weeks

Avalanche Energy Rating (Eas) :

79 mJ

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Current - Continuous Drain (Id) @ 25°C :

9A Ta

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Weight :

130mg

Input Capacitance (Ciss) (Max) @ Vds :

1610pF @ 15V

Drain Current-Max (Abs) (ID) :

9A

Power Dissipation-Max :

1.47W Ta

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Published :

2001

Length :

4.9mm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

JESD-609 Code :

e4

Width :

3.9mm

Rds On (Max) @ Id, Vgs :

11.5m Ω @ 9A, 10V

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

8 ns

Radiation Hardening :

No

Continuous Drain Current (ID) :

9A

Turn-Off Delay Time :

33 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Power Dissipation :

1.47W

Number of Pins :

8

Terminal Position :

Dual

Height :

1.575mm

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Threshold Voltage :

1.2V

Resistance :

11.5mOhm

Lead Free :

Lead Free