FDS6690AS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Number of Terminations :

8

Terminal Position :

Dual

Series :

PowerTrench®, SyncFET™

Radiation Hardening :

No

Continuous Drain Current (ID) :

10A

Fall Time (Typ) :

6 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Voltage - Rated DC :

30V

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 15V

Vgs(th) (Max) @ Id :

3V @ 1mA

Threshold Voltage :

1.6V

Rds On (Max) @ Id, Vgs :

12m Ω @ 10A, 10V

Current Rating :

10A

Resistance :

12mOhm

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Number of Elements :

1

Published :

2004

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Width :

4mm

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

25 ns

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Nominal Vgs :

1.6 V

Vgs (Max) :

±20V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Turn On Delay Time :

8 ns

JESD-609 Code :

e4

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Lead Free :

Lead Free

Height :

1.5mm

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

2.5W

Transistor Application :

SWITCHING

Rise Time :

5ns

Weight :

130mg

FET Type :

N-Channel

Pbfree Code :

yes

Factory Lead Time :

18 Weeks

Power Dissipation-Max :

2.5W Ta

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Length :

5mm

REACH SVHC :

No SVHC

Element Configuration :

Single