FDS6690A
- Mfr.Part #
- FDS6690A
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11A 8SOIC
- Stock
- 13,969
- In Stock :
- 13,969
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Weight :
- 130mg
- Packaging :
- Tape and Reel (TR)
- Width :
- 4mm
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Series :
- PowerTrench®
- Resistance :
- 12.5mOhm
- Drain to Source Breakdown Voltage :
- 30V
- Rise Time :
- 5ns
- JESD-609 Code :
- e4
- Fall Time (Typ) :
- 9 ns
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 1205pF @ 15V
- Mount :
- Surface Mount
- Number of Terminations :
- 8
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta
- Factory Lead Time :
- 18 Weeks
- Terminal Form :
- Gull wing
- Dual Supply Voltage :
- 30V
- Continuous Drain Current (ID) :
- 11A
- Turn On Delay Time :
- 9 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current Rating :
- 11A
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 28 ns
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 12.5m Ω @ 11A, 10V
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 30V
- Power Dissipation-Max :
- 2.5W Ta
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2007
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins :
- 8
- Power Dissipation :
- 2.5W
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Contact Plating :
- Tin
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.5mm
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 5V
- Terminal Position :
- Dual
- Length :
- 5mm
- Threshold Voltage :
- 1.9V
- Datasheets
- FDS6690A

N-Channel Tape & Reel (TR) 12.5m Ω @ 11A, 10V ±20V 1205pF @ 15V 16nC @ 5V 8-SOIC (0.154, 3.90mm Width)
CSD17559Q5 Description
The CSD17559Q5 is a SON NexFETTM power MOSFET with a 30 V, 0.95 mΩ, 5 x 6 mm package designed to minimize losses in synchronous rectification and other power conversion applications.
CSD17559Q5 Features
Extremely Low Resistance
Ultra-L ow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5 mm x 6 mm Plastic Package
CSD17559Q5 Applications
Point of Load Synchronous Buck in Networking, Telecom, and Computing Systems
Synchronous Rectification
Active ORing and Hotswap Applications
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