FDS6688S
- Mfr.Part #
- FDS6688S
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 16A 8SOIC
- Stock
- 67
- In Stock :
- 67
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 260
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 16A, 10V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 16A
- Drain-source On Resistance-Max :
- 0.006Ohm
- Transistor Element Material :
- SILICON
- Terminal Finish :
- MATTE TIN
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- JESD-30 Code :
- R-PDSO-G8
- Number of Terminations :
- 8
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 2.5W Ta
- Terminal Position :
- Dual
- Pin Count :
- 8
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.29pF @ 15V
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Series :
- PowerTrench®
- Qualification Status :
- COMMERCIAL
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 30V
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- yes
- Drain to Source Voltage (Vdss) :
- 30V
- Datasheets
- FDS6688S

N-Channel Tape & Reel (TR) 6m Ω @ 16A, 10V ±20V 3.29pF @ 15V 78nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
FDS6688S Overview
A device's maximal input capacitance is 3.29pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 16A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
FDS6688S Features
a 30V drain to source voltage (Vdss)
FDS6688S Applications
There are a lot of Rochester Electronics, LLC
FDS6688S applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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