FDS6681Z

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e4

Dual Supply Voltage :

30V

Transistor Element Material :

SILICON

Power Dissipation :

2.5W

Threshold Voltage :

-1.8V

Terminal Position :

Dual

Power Dissipation-Max :

2.5W Ta

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Junction Temperature (Tj) :

150°C

Height :

1.75mm

Input Capacitance (Ciss) (Max) @ Vds :

7540pF @ 15V

Terminal Form :

Gull wing

Pbfree Code :

yes

Length :

5mm

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

FET Type :

P-Channel

Turn On Delay Time :

20 ns

Continuous Drain Current (ID) :

-20A

Lead Free :

Lead Free

Number of Channels :

1

Fall Time (Typ) :

380 ns

Turn-Off Delay Time :

660 ns

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Current Rating :

-20A

Voltage - Rated DC :

-30V

Vgs (Max) :

±25V

Termination :

SMD/SMT

Width :

4mm

Rise Time :

9ns

Factory Lead Time :

18 Weeks

Number of Elements :

1

Transistor Application :

SWITCHING

Contact Plating :

Tin

Nominal Vgs :

1.8 V

Published :

2005

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 20A, 10V

Radiation Hardening :

No

Weight :

130mg

Number of Pins :

8

REACH SVHC :

No SVHC

Number of Terminations :

8

Drain to Source Breakdown Voltage :

-30V

Resistance :

4.6mOhm

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

25V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Series :

PowerTrench®