FDS6680AS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Resistance :

10MOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 1mA

JESD-609 Code :

e4

Current - Continuous Drain (Id) @ 25°C :

11.5A Ta

Weight :

130mg

Turn On Delay Time :

11 ns

Recovery Time :

18 ns

Number of Terminations :

8

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Length :

5mm

Transistor Application :

SWITCHING

Width :

4mm

Continuous Drain Current (ID) :

11.5A

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

18 Weeks

FET Type :

N-Channel

REACH SVHC :

No SVHC

Power Dissipation-Max :

2.5W Ta

Drain to Source Breakdown Voltage :

30V

Current Rating :

-11.5A

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Contact Plating :

Tin

Terminal Position :

Dual

Lead Free :

Lead Free

Terminal Form :

Gull wing

Radiation Hardening :

No

Rise Time :

12ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

10m Ω @ 11.5A, 10V

Turn-Off Delay Time :

18 ns

Voltage - Rated DC :

-30V

Series :

PowerTrench®, SyncFET™

ECCN Code :

EAR99

Number of Elements :

1

Threshold Voltage :

1.5V

Pbfree Code :

yes

Height :

1.5mm

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Fall Time (Typ) :

11 ns

Power Dissipation :

2.5mW

Published :

2005

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1240pF @ 15V

Mounting Type :

Surface Mount