FDS6680A

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Mfr.Part #
FDS6680A
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 12.5A 8SOIC
Stock
25,795
In Stock :
25,795

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Number of Terminations :
8
Number of Pins :
8
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
10m Ω @ 11.5A, 10V
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Series :
PowerTrench®, SyncFET™
Voltage - Rated DC :
-30V
Drain to Source Breakdown Voltage :
30V
Width :
4mm
Input Capacitance (Ciss) (Max) @ Vds :
1240pF @ 15V
Current - Continuous Drain (Id) @ 25°C :
11.5A Ta
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Number of Elements :
1
Weight :
130mg
Power Dissipation :
2.5mW
Vgs(th) (Max) @ Id :
3V @ 1mA
Resistance :
10MOhm
Terminal Position :
Dual
Rise Time :
12ns
Contact Plating :
Tin
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Factory Lead Time :
18 Weeks
Power Dissipation-Max :
2.5W Ta
Mount :
Surface Mount
Turn-Off Delay Time :
18 ns
Current Rating :
-11.5A
Package / Case :
8-SOIC (0.154, 3.90mm Width)
JESD-609 Code :
e4
Terminal Form :
Gull wing
Height :
1.5mm
FET Type :
N-Channel
Turn On Delay Time :
11 ns
Published :
2005
Length :
5mm
Element Configuration :
Single
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
REACH SVHC :
No SVHC
Fall Time (Typ) :
11 ns
Transistor Element Material :
SILICON
Packaging :
Tape and Reel (TR)
Gate to Source Voltage (Vgs) :
20V
Radiation Hardening :
No
Vgs (Max) :
±20V
Mounting Type :
Surface Mount
Continuous Drain Current (ID) :
11.5A
Lead Free :
Lead Free
Threshold Voltage :
1.5V
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Recovery Time :
18 ns
Datasheets
FDS6680A
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS6680A from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, FDS6680A pinout, FDS6680A datasheet PDF, FDS6680A amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS6680A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS6680A


N-Channel Tape & Reel (TR) 10m Ω @ 11.5A, 10V ±20V 1240pF @ 15V 30nC @ 10V 8-SOIC (0.154, 3.90mm Width)

FDS6680AS Description


The FDS6680AS is a 30V N-channel PowerTrench? SyncFET having been specially tailored to minimize the on-state resistance and maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDS6680AS is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr), and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using monolithic SyncFET technology. This product is general usage and suitable for many different applications.



FDS6680AS Features


  • 11.5A, 30V

  • RDS(ON) = 8.0 mΩ @ VGS = 10V

  • RDS(ON) = 10.5 mΩ @ VGS = 4.5V

  • Includes SyncFET Schottky body diode

  • Low gate charge (22nC typical)

  • High-performance trench technology for extremely low RDS(ON) and fast switching

  • High power and current handling capability



FDS6680AS Applications


  • DC/DC Converters

  • Low Side Notebook

  • Cellular phones 

  • Laptop computers

  • Photovoltaic systems 


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