FDS6680
- Mfr.Part #
- FDS6680
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11.5A 8SOIC
- Stock
- 30,706
- In Stock :
- 30,706
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PDSO-G8
- Terminal Finish :
- MATTE TIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.07pF @ 15V
- Number of Terminations :
- 8
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 5V
- Transistor Element Material :
- SILICON
- Pin Count :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 11.5A Ta
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain Current-Max (Abs) (ID) :
- 11.5A
- DS Breakdown Voltage-Min :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 30V
- Series :
- PowerTrench®
- Drain-source On Resistance-Max :
- 0.01Ohm
- Qualification Status :
- COMMERCIAL
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 11.5A, 10V
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 2.5W Ta
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Pbfree Code :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FDS6680

N-Channel Tape & Reel (TR) 10m Ω @ 11.5A, 10V ±20V 2.07pF @ 15V 27nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
FDS6680 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.07pF @ 15V.There is no drain current on this device since the maximum continuous current it can conduct is 11.5A.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
FDS6680 Features
a 30V drain to source voltage (Vdss)
FDS6680 Applications
There are a lot of Rochester Electronics, LLC
FDS6680 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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