FDS6679Z
- Mfr.Part #
- FDS6679Z
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 13A 8SOIC
- Stock
- 31,096
- In Stock :
- 31,096
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 94nC @ 10V
- Qualification Status :
- COMMERCIAL
- Power Dissipation-Max :
- 2.5W Ta
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.803pF @ 15V
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Voltage (Vdss) :
- 30V
- Surface Mount :
- yes
- Series :
- PowerTrench®
- Drain Current-Max (Abs) (ID) :
- 13A
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- FET Type :
- P-Channel
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 8
- Vgs (Max) :
- +20V, -25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- JESD-30 Code :
- R-PDSO-G8
- DS Breakdown Voltage-Min :
- 30V
- Drain-source On Resistance-Max :
- 0.009Ohm
- Pin Count :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 13A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- MATTE TIN
- Datasheets
- FDS6679Z

P-Channel Tape & Reel (TR) 9m Ω @ 13A, 10V +20V, -25V 3.803pF @ 15V 94nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
FDS6679Z Overview
A device's maximum input capacitance is 3.803pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 13A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
FDS6679Z Features
a 30V drain to source voltage (Vdss)
FDS6679Z Applications
There are a lot of Rochester Electronics, LLC
FDS6679Z applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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