FDS6679Z

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

1

JESD-609 Code :

e3

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Number of Terminations :

8

Surface Mount :

yes

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

3.803pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

13A Ta

JESD-30 Code :

R-PDSO-G8

Series :

PowerTrench®

Drain to Source Voltage (Vdss) :

30V

FET Type :

P-Channel

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Power Dissipation-Max :

2.5W Ta

Drain-source On Resistance-Max :

0.009Ohm

Drain Current-Max (Abs) (ID) :

13A

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

+20V, -25V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

9m Ω @ 13A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE