FDS6679AZ

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Mfr.Part #
FDS6679AZ
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 30V 13A 8SOIC
Stock
7
In Stock :
7

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Turn-Off Delay Time :
210 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn On Delay Time :
13 ns
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Radiation Hardening :
No
Rise Time :
15ns
Drain to Source Voltage (Vdss) :
30V
Transistor Element Material :
SILICON
Terminal Form :
Gull wing
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Threshold Voltage :
-1.9V
Power Dissipation :
2.5W
Input Capacitance (Ciss) (Max) @ Vds :
3845pF @ 15V
Fall Time (Typ) :
92 ns
Terminal Position :
Dual
JESD-609 Code :
e4
Vgs(th) (Max) @ Id :
3V @ 250µA
Element Configuration :
Single
Feedback Cap-Max (Crss) :
745 pF
Power Dissipation-Max :
2.5W Ta
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Contact Plating :
Tin
Vgs (Max) :
±25V
Number of Pins :
8
Current Rating :
-13A
Mounting Type :
Surface Mount
Resistance :
9.3mOhm
Gate to Source Voltage (Vgs) :
25V
Weight :
130mg
Continuous Drain Current (ID) :
-13A
Gate Charge (Qg) (Max) @ Vgs :
96nC @ 10V
Width :
4mm
Pbfree Code :
yes
Number of Terminations :
8
FET Type :
P-Channel
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
13A Ta
Published :
2008
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Drain to Source Breakdown Voltage :
-30V
Transistor Application :
SWITCHING
REACH SVHC :
No SVHC
Factory Lead Time :
18 Weeks
Height :
1.5mm
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Length :
5mm
Rds On (Max) @ Id, Vgs :
9.3m Ω @ 13A, 10V
Series :
PowerTrench®
Nominal Vgs :
-1.9 V
Voltage - Rated DC :
-30V
Datasheets
FDS6679AZ
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS6679AZ from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Mounting Type:Surface Mount, Number of Terminations:8, Package / Case:8-SOIC (0.154, 3.90mm Width), FDS6679AZ pinout, FDS6679AZ datasheet PDF, FDS6679AZ amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS6679AZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS6679AZ


P-Channel Tape & Reel (TR) 9.3m Ω @ 13A, 10V ±25V 3845pF @ 15V 96nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)

FDS6679AZ Description


The FDS6679AZ is a P-channel MOSFET produced using an advanced PowerTrench? process. The FDS6679AZ has been specially tailored to minimize the ON-state resistance. The onsemi FDS6679AZ is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDS6679AZ is in the SOIC-8 package with 2.5W power dissipation.



FDS6679AZ Features


  • Max rDS(on) = 9.3mΩat VGS = -10V, ID = -13A

  • Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A

  • Extended VGS range (-25V) for battery applications

  • HBM ESD protection level of 6kV typical (note 3)

  • High-performance trench technology for extremely lowrDS(on)

  • High power and current handling capability



FDS6679AZ Applications


  • Notebook Computers

  • Portable Battery Packs

  • Datacom module

  • Wired networking

  • Wearables (non-medical)


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