FDS6679AZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-30V

Weight :

130mg

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±25V

Fall Time (Typ) :

92 ns

Voltage - Rated DC :

-30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 13A, 10V

Current Rating :

-13A

Length :

5mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Input Capacitance (Ciss) (Max) @ Vds :

3845pF @ 15V

Number of Pins :

8

Terminal Position :

Dual

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Mount :

Surface Mount

Height :

1.5mm

Threshold Voltage :

-1.9V

Series :

PowerTrench®

JESD-609 Code :

e4

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.5W

Current - Continuous Drain (Id) @ 25°C :

13A Ta

ECCN Code :

EAR99

Resistance :

9.3mOhm

Lead Free :

Lead Free

Continuous Drain Current (ID) :

-13A

Operating Mode :

ENHANCEMENT MODE

Published :

2008

Factory Lead Time :

18 Weeks

Rise Time :

15ns

Element Configuration :

Single

Width :

4mm

Feedback Cap-Max (Crss) :

745 pF

Contact Plating :

Tin

Terminal Form :

Gull wing

Power Dissipation-Max :

2.5W Ta

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

25V

Nominal Vgs :

-1.9 V

Turn On Delay Time :

13 ns

FET Type :

P-Channel

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Turn-Off Delay Time :

210 ns