FDS6679AZ

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Mfr.Part #
FDS6679AZ
Manufacturer
Fairchild Semiconductor
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Stock
7
In Stock :
7

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Threshold Voltage :
-1.9V
Width :
4mm
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Published :
2008
Current - Continuous Drain (Id) @ 25°C :
13A Ta
Terminal Form :
Gull wing
Mount :
Surface Mount
Series :
PowerTrench®
Factory Lead Time :
18 Weeks
Mounting Type :
Surface Mount
Turn-Off Delay Time :
210 ns
REACH SVHC :
No SVHC
JESD-609 Code :
e4
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
130mg
Height :
1.5mm
Element Configuration :
Single
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
3V @ 250µA
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Drain to Source Breakdown Voltage :
-30V
Fall Time (Typ) :
92 ns
Resistance :
9.3mOhm
Power Dissipation :
2.5W
Terminal Position :
Dual
Rds On (Max) @ Id, Vgs :
9.3m Ω @ 13A, 10V
Contact Plating :
Tin
Number of Pins :
8
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Number of Terminations :
8
Lead Free :
Lead Free
Vgs (Max) :
±25V
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
Voltage - Rated DC :
-30V
Pbfree Code :
yes
Feedback Cap-Max (Crss) :
745 pF
Gate to Source Voltage (Vgs) :
25V
Current Rating :
-13A
Continuous Drain Current (ID) :
-13A
Radiation Hardening :
No
Nominal Vgs :
-1.9 V
Number of Elements :
1
FET Type :
P-Channel
Power Dissipation-Max :
2.5W Ta
Input Capacitance (Ciss) (Max) @ Vds :
3845pF @ 15V
Turn On Delay Time :
13 ns
Rise Time :
15ns
Gate Charge (Qg) (Max) @ Vgs :
96nC @ 10V
Drain to Source Voltage (Vdss) :
30V
Length :
5mm
Datasheets
FDS6679AZ
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDS6679AZ from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:8, Number of Terminations:8, FDS6679AZ pinout, FDS6679AZ datasheet PDF, FDS6679AZ amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDS6679AZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDS6679AZ


P-Channel Tape & Reel (TR) 9.3m Ω @ 13A, 10V ±25V 3845pF @ 15V 96nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)

FDS6679AZ Description


The FDS6679AZ is a P-channel MOSFET produced using an advanced PowerTrench? process. The FDS6679AZ has been specially tailored to minimize the ON-state resistance. The onsemi FDS6679AZ is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDS6679AZ is in the SOIC-8 package with 2.5W power dissipation.



FDS6679AZ Features


  • Max rDS(on) = 9.3mΩat VGS = -10V, ID = -13A

  • Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A

  • Extended VGS range (-25V) for battery applications

  • HBM ESD protection level of 6kV typical (note 3)

  • High-performance trench technology for extremely lowrDS(on)

  • High power and current handling capability



FDS6679AZ Applications


  • Notebook Computers

  • Portable Battery Packs

  • Datacom module

  • Wired networking

  • Wearables (non-medical)


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