FDS6679AZ
- Mfr.Part #
- FDS6679AZ
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 7
- In Stock :
- 7
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Threshold Voltage :
- -1.9V
- Width :
- 4mm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Published :
- 2008
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Series :
- PowerTrench®
- Factory Lead Time :
- 18 Weeks
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 210 ns
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e4
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 130mg
- Height :
- 1.5mm
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Drain to Source Breakdown Voltage :
- -30V
- Fall Time (Typ) :
- 92 ns
- Resistance :
- 9.3mOhm
- Power Dissipation :
- 2.5W
- Terminal Position :
- Dual
- Rds On (Max) @ Id, Vgs :
- 9.3m Ω @ 13A, 10V
- Contact Plating :
- Tin
- Number of Pins :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Terminations :
- 8
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±25V
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- -30V
- Pbfree Code :
- yes
- Feedback Cap-Max (Crss) :
- 745 pF
- Gate to Source Voltage (Vgs) :
- 25V
- Current Rating :
- -13A
- Continuous Drain Current (ID) :
- -13A
- Radiation Hardening :
- No
- Nominal Vgs :
- -1.9 V
- Number of Elements :
- 1
- FET Type :
- P-Channel
- Power Dissipation-Max :
- 2.5W Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 3845pF @ 15V
- Turn On Delay Time :
- 13 ns
- Rise Time :
- 15ns
- Gate Charge (Qg) (Max) @ Vgs :
- 96nC @ 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Length :
- 5mm
- Datasheets
- FDS6679AZ

P-Channel Tape & Reel (TR) 9.3m Ω @ 13A, 10V ±25V 3845pF @ 15V 96nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
FDS6679AZ Description
The FDS6679AZ is a P-channel MOSFET produced using an advanced PowerTrench? process. The FDS6679AZ has been specially tailored to minimize the ON-state resistance. The onsemi FDS6679AZ is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDS6679AZ is in the SOIC-8 package with 2.5W power dissipation.
FDS6679AZ Features
-
Max rDS(on) = 9.3mΩat VGS = -10V, ID = -13A
-
Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
-
Extended VGS range (-25V) for battery applications
-
HBM ESD protection level of 6kV typical (note 3)
-
High-performance trench technology for extremely lowrDS(on)
-
High power and current handling capability
FDS6679AZ Applications
-
Notebook Computers
-
Portable Battery Packs
-
Datacom module
-
Wired networking
-
Wearables (non-medical)
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