FDS6679

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Mfr.Part #
FDS6679
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 30V 13A 8SOIC
Stock
26,764
In Stock :
26,764

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Mount :
Surface Mount
Drain to Source Breakdown Voltage :
-30V
Termination :
SMD/SMT
Nominal Vgs :
-1.6 V
Power Dissipation-Max :
2.5W Ta
Mounting Type :
Surface Mount
Resistance :
9mOhm
JESD-609 Code :
e4
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Packaging :
Tape and Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds :
3939pF @ 15V
Terminal Form :
Gull wing
Radiation Hardening :
No
Contact Plating :
Tin
Weight :
130mg
Vgs (Max) :
±25V
Number of Pins :
8
ECCN Code :
EAR99
REACH SVHC :
No SVHC
Gate to Source Voltage (Vgs) :
25V
Number of Terminations :
8
Transistor Element Material :
SILICON
Current Rating :
-13A
Vgs(th) (Max) @ Id :
3V @ 250µA
Operating Temperature :
-55°C~175°C TJ
Rds On (Max) @ Id, Vgs :
9m Ω @ 13A, 10V
Voltage - Rated DC :
-30V
Pbfree Code :
yes
FET Type :
P-Channel
Lead Free :
Lead Free
Turn-Off Delay Time :
110 ns
Factory Lead Time :
18 Weeks
Gate Charge (Qg) (Max) @ Vgs :
100nC @ 10V
Terminal Position :
Dual
Current - Continuous Drain (Id) @ 25°C :
13A Ta
Turn On Delay Time :
19 ns
Element Configuration :
Single
Fall Time (Typ) :
65 ns
RoHS Status :
ROHS3 Compliant
Power Dissipation :
2.5W
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Threshold Voltage :
-1.6V
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
13A
Series :
PowerTrench®
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
10ns
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Dual Supply Voltage :
30V
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Datasheets
FDS6679
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS6679 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:8, Number of Terminations:8, Operating Temperature:-55°C~175°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), FDS6679 pinout, FDS6679 datasheet PDF, FDS6679 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS6679 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS6679


P-Channel Tape & Reel (TR) 9m Ω @ 13A, 10V ±25V 3939pF @ 15V 100nC @ 10V 8-SOIC (0.154, 3.90mm Width)

FDS6679 Description

 

FDS6679 P-Channel MOSFET was created with a distinctive PowerTrench technology that provides the most efficient RDS(on) together with an optimized BVDSS capability. FDS6679 MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDS6679 ON Semiconductor is a general-purpose device and can be used in a variety of applications.

 

 

FDS6679 Features

 

Extended VGSS range for battery applications

High performance trench technology for extremely low rDS(on)

High power and current handling capability

RoHS compliant

 

 

FDS6679 Applications

 

Control Switch

Synchronous & Non-Synchronous Buck

Load Switch

Inverter

 


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