FDS6679
- Mfr.Part #
- FDS6679
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 13A 8SOIC
- Stock
- 26,764
- In Stock :
- 26,764
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- -30V
- Termination :
- SMD/SMT
- Nominal Vgs :
- -1.6 V
- Power Dissipation-Max :
- 2.5W Ta
- Mounting Type :
- Surface Mount
- Resistance :
- 9mOhm
- JESD-609 Code :
- e4
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 3939pF @ 15V
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Weight :
- 130mg
- Vgs (Max) :
- ±25V
- Number of Pins :
- 8
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Terminations :
- 8
- Transistor Element Material :
- SILICON
- Current Rating :
- -13A
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 13A, 10V
- Voltage - Rated DC :
- -30V
- Pbfree Code :
- yes
- FET Type :
- P-Channel
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 110 ns
- Factory Lead Time :
- 18 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Terminal Position :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta
- Turn On Delay Time :
- 19 ns
- Element Configuration :
- Single
- Fall Time (Typ) :
- 65 ns
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 2.5W
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Threshold Voltage :
- -1.6V
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 13A
- Series :
- PowerTrench®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 10ns
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Dual Supply Voltage :
- 30V
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FDS6679

P-Channel Tape & Reel (TR) 9m Ω @ 13A, 10V ±25V 3939pF @ 15V 100nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS6679 Description
FDS6679 P-Channel MOSFET was created with a distinctive PowerTrench technology that provides the most efficient RDS(on) together with an optimized BVDSS capability. FDS6679 MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDS6679 ON Semiconductor is a general-purpose device and can be used in a variety of applications.
FDS6679 Features
Extended VGSS range for battery applications
High performance trench technology for extremely low rDS(on)
High power and current handling capability
RoHS compliant
FDS6679 Applications
Control Switch
Synchronous & Non-Synchronous Buck
Load Switch
Inverter
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