FDS6679
- Mfr.Part #
- FDS6679
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 13A 8SOIC
- Stock
- 26,764
- In Stock :
- 26,764
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Contact Plating :
- Tin
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 18 Weeks
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 13A, 10V
- Resistance :
- 9mOhm
- Power Dissipation-Max :
- 2.5W Ta
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Turn On Delay Time :
- 19 ns
- Turn-Off Delay Time :
- 110 ns
- Dual Supply Voltage :
- 30V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Termination :
- SMD/SMT
- Fall Time (Typ) :
- 65 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e4
- Vgs (Max) :
- ±25V
- Threshold Voltage :
- -1.6V
- Current Rating :
- -13A
- Power Dissipation :
- 2.5W
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta
- REACH SVHC :
- No SVHC
- FET Type :
- P-Channel
- Gate to Source Voltage (Vgs) :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -30V
- Weight :
- 130mg
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- -30V
- Number of Terminations :
- 8
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Mount :
- Surface Mount
- Nominal Vgs :
- -1.6 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3939pF @ 15V
- Continuous Drain Current (ID) :
- 13A
- Terminal Form :
- Gull wing
- Number of Pins :
- 8
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Rise Time :
- 10ns
- Series :
- PowerTrench®
- Lead Free :
- Lead Free
- Datasheets
- FDS6679
FDS6679 Documents

P-Channel Tape & Reel (TR) 9m Ω @ 13A, 10V ±25V 3939pF @ 15V 100nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS6679 Description
FDS6679 P-Channel MOSFET was created with a distinctive PowerTrench technology that provides the most efficient RDS(on) together with an optimized BVDSS capability. FDS6679 MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDS6679 ON Semiconductor is a general-purpose device and can be used in a variety of applications.
FDS6679 Features
Extended VGSS range for battery applications
High performance trench technology for extremely low rDS(on)
High power and current handling capability
RoHS compliant
FDS6679 Applications
Control Switch
Synchronous & Non-Synchronous Buck
Load Switch
Inverter
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