FDS6675BZ

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Mfr.Part #
FDS6675BZ
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 30V 11A 8SOIC
Stock
4
In Stock :
4

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Dual Supply Voltage :
-30V
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e4
Transistor Element Material :
SILICON
Lead Free :
Lead Free
Continuous Drain Current (ID) :
11A
Gate Charge (Qg) (Max) @ Vgs :
62nC @ 10V
Mounting Type :
Surface Mount
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Turn On Delay Time :
3 ns
Terminal Form :
Gull wing
Drain to Source Voltage (Vdss) :
30V
Contact Plating :
Tin
Element Configuration :
Single
Power Dissipation :
2.5W
Rise Time :
7.8ns
Gate to Source Voltage (Vgs) :
25V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Nominal Vgs :
-2 V
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Vgs(th) (Max) @ Id :
3V @ 250µA
Length :
5mm
Factory Lead Time :
18 Weeks
Terminal Position :
Dual
Drain to Source Breakdown Voltage :
-30V
Mount :
Surface Mount
Termination :
SMD/SMT
Operating Mode :
ENHANCEMENT MODE
Series :
PowerTrench®
Width :
4mm
Resistance :
21.8MOhm
Feedback Cap-Max (Crss) :
500 pF
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Threshold Voltage :
-2V
Number of Elements :
1
Weight :
130mg
ECCN Code :
EAR99
Current - Continuous Drain (Id) @ 25°C :
11A Ta
Number of Pins :
8
Number of Terminations :
8
Fall Time (Typ) :
60 ns
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±25V
Power Dissipation-Max :
2.5W Ta
Turn-Off Delay Time :
120 ns
Base Part Number :
FDS6675
Published :
2001
FET Type :
P-Channel
Height :
1.5mm
Radiation Hardening :
No
Input Capacitance (Ciss) (Max) @ Vds :
2470pF @ 15V
REACH SVHC :
No SVHC
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Rds On (Max) @ Id, Vgs :
13m Ω @ 11A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS6675BZ from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:8, Number of Terminations:8, Operating Temperature:-55°C~150°C TJ, Base Part Number:FDS6675, Package / Case:8-SOIC (0.154, 3.90mm Width), FDS6675BZ pinout, FDS6675BZ datasheet PDF, FDS6675BZ amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS6675BZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS6675BZ


P-Channel Tape & Reel (TR) 13m Ω @ 11A, 10V ±25V 2470pF @ 15V 62nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)

FDS6675BZ Description


FDS6675BZ is a type of P-channel PowerTrench? MOSFET that is manufactured by ON Semiconductor based on the advanced power trench technology for extremely low on-state resistance and extremely low RDS (on). Based on its high quality and reliable performance, it is ideally suitable for power management and load switching applications in notebook computers and portable battery packs.



FDS6675BZ Features


  • Advanced power trench technology

  • Extremely low on-state resistance

  • Extremely low RDS (on)

  • Available in the SOIC8 package

  • High power and current handling capability



FDS6675BZ Applications


  • Power management

  • Load switching applications


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