FDS6675BZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Number of Elements :

1

Power Dissipation :

2.5W

FET Type :

P-Channel

Element Configuration :

Single

Pbfree Code :

yes

Number of Pins :

8

Mounting Type :

Surface Mount

Dual Supply Voltage :

-30V

Terminal Form :

Gull wing

Contact Plating :

Tin

Fall Time (Typ) :

60 ns

Turn-Off Delay Time :

120 ns

Factory Lead Time :

18 Weeks

Power Dissipation-Max :

2.5W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Feedback Cap-Max (Crss) :

500 pF

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-30V

Vgs (Max) :

±25V

Operating Temperature :

-55°C~150°C TJ

Termination :

SMD/SMT

Rds On (Max) @ Id, Vgs :

13m Ω @ 11A, 10V

Radiation Hardening :

No

Height :

1.5mm

Nominal Vgs :

-2 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

5mm

Rise Time :

7.8ns

Base Part Number :

FDS6675

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Voltage (Vdss) :

30V

Threshold Voltage :

-2V

Weight :

130mg

Series :

PowerTrench®

Turn On Delay Time :

3 ns

Published :

2001

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2470pF @ 15V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Width :

4mm

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Resistance :

21.8MOhm

Gate to Source Voltage (Vgs) :

25V

Terminal Position :

Dual

JESD-609 Code :

e4

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Continuous Drain Current (ID) :

11A