FDS6675A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±25V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain-source On Resistance-Max :

0.013Ohm

Pbfree Code :

yes

Power Dissipation-Max :

2.5W Ta

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

11A

Current - Continuous Drain (Id) @ 25°C :

11A Ta

FET Type :

P-Channel

Surface Mount :

yes

Series :

PowerTrench®

Number of Elements :

1

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

30V

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G8

Rds On (Max) @ Id, Vgs :

13m Ω @ 11A, 10V

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

2.33pF @ 15V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Pin Count :

8