FDS6675A
- Mfr.Part #
- FDS6675A
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 11A 8SOIC
- Stock
- 8,052
- In Stock :
- 8,052
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- COMMERCIAL
- DS Breakdown Voltage-Min :
- 30V
- Reach Compliance Code :
- Unknown
- Surface Mount :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.33pF @ 15V
- Transistor Element Material :
- SILICON
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Position :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Terminal Finish :
- MATTE TIN
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 8
- FET Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 11A, 10V
- Drain-source On Resistance-Max :
- 0.013Ohm
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 2.5W Ta
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 5V
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±25V
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- PowerTrench®
- JESD-30 Code :
- R-PDSO-G8
- Pin Count :
- 8
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 11A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Elements :
- 1
- Datasheets
- FDS6675A

P-Channel Tape & Reel (TR) 13m Ω @ 11A, 10V ±25V 2.33pF @ 15V 34nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
FDS6675A Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.33pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 11A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
FDS6675A Features
a 30V drain to source voltage (Vdss)
FDS6675A Applications
There are a lot of Rochester Electronics, LLC
FDS6675A applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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