FDS6675

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Mfr.Part #
FDS6675
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 30V 11A 8SOIC
Stock
26,354
In Stock :
26,354

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Radiation Hardening :
No
Additional Feature :
LOGIC LEVEL COMPATIBLE
Number of Elements :
1
Turn On Delay Time :
12 ns
Drain to Source Voltage (Vdss) :
30V
Voltage - Rated DC :
-30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Termination :
SMD/SMT
Rds On (Max) @ Id, Vgs :
14m Ω @ 11A, 10V
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
REACH SVHC :
No SVHC
Resistance :
14mOhm
Dual Supply Voltage :
-30V
Base Part Number :
FDS6675
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
3V @ 250µA
Nominal Vgs :
-1.7 V
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 15V
Terminal Position :
Dual
Drain to Source Breakdown Voltage :
-30V
Gate to Source Voltage (Vgs) :
20V
Transistor Element Material :
SILICON
Factory Lead Time :
18 Weeks
Number of Terminations :
8
Published :
1999
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 5V
Power Dissipation :
2.5W
Lead Free :
Lead Free
Current Rating :
-11A
ECCN Code :
EAR99
Element Configuration :
Single
Threshold Voltage :
-1.7V
Mount :
Surface Mount
Pbfree Code :
yes
Series :
PowerTrench®
FET Type :
P-Channel
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
11A Ta
Rise Time :
16ns
Fall Time (Typ) :
100 ns
Continuous Drain Current (ID) :
11A
RoHS Status :
ROHS3 Compliant
Weight :
130mg
Number of Pins :
8
Turn-Off Delay Time :
50 ns
Power Dissipation-Max :
2.5W Ta
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS6675 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Base Part Number:FDS6675, Number of Terminations:8, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), FDS6675 pinout, FDS6675 datasheet PDF, FDS6675 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS6675 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS6675


P-Channel Tape & Reel (TR) 14m Ω @ 11A, 10V ±20V 3000pF @ 15V 42nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)

FDS6675 Description


This P-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.



FDS6675 Features


  • Low gate charge (30nC typical)

  • High performance trench technology for extremely low RDS(ON)

  • High power and current handling capability

  • 11 A, -30 V



FDS6675 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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