FDS6675
- Mfr.Part #
- FDS6675
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 11A 8SOIC
- Stock
- 26,354
- In Stock :
- 26,354
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000pF @ 15V
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Rise Time :
- 16ns
- Nominal Vgs :
- -1.7 V
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 18 Weeks
- FET Type :
- P-Channel
- Weight :
- 130mg
- Published :
- 1999
- Continuous Drain Current (ID) :
- 11A
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta
- Series :
- PowerTrench®
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 11A, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 100 ns
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Power Dissipation-Max :
- 2.5W Ta
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 14mOhm
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- -11A
- Pbfree Code :
- yes
- Number of Terminations :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drain to Source Breakdown Voltage :
- -30V
- Gate Charge (Qg) (Max) @ Vgs :
- 42nC @ 5V
- Terminal Form :
- Gull wing
- Termination :
- SMD/SMT
- Turn On Delay Time :
- 12 ns
- Voltage - Rated DC :
- -30V
- Drain to Source Voltage (Vdss) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 50 ns
- Terminal Position :
- Dual
- Base Part Number :
- FDS6675
- Dual Supply Voltage :
- -30V
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Number of Elements :
- 1
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Threshold Voltage :
- -1.7V
- Power Dissipation :
- 2.5W
- Datasheets
- FDS6675
FDS6675 Documents

P-Channel Tape & Reel (TR) 14m Ω @ 11A, 10V ±20V 3000pF @ 15V 42nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
FDS6675 Description
This P-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
FDS6675 Features
-
Low gate charge (30nC typical)
-
High performance trench technology for extremely low RDS(ON)
-
High power and current handling capability
-
11 A, -30 V
FDS6675 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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