FDS6673BZ-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 14.5A, 10V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

14.5A

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

8

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

14.5A Ta

Gate Charge (Qg) (Max) @ Vgs :

124nC @ 10V

Drain to Source Voltage (Vdss) :

30V

Pbfree Code :

yes

Fall Time (Typ) :

105 ns

Terminal Position :

Dual

FET Type :

P-Channel

Turn-Off Delay Time :

225 ns

JESD-609 Code :

e4

Radiation Hardening :

No

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Turn On Delay Time :

14 ns

Element Configuration :

Single

Power Dissipation-Max :

2.5W Ta

Vgs (Max) :

±25V

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 25V

Mounting Type :

Surface Mount

Series :

Automotive, AEC-Q101, PowerTrench®

Feedback Cap-Max (Crss) :

900 pF

Power Dissipation :

2.5W

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Gate to Source Voltage (Vgs) :

25V

Lifecycle Status :

LIFETIME (Last Updated: 1 day ago)

Drain to Source Breakdown Voltage :

-30V

Weight :

230.4mg

Rise Time :

16ns

Number of Elements :

1

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)