FDS6673BZ
- Mfr.Part #
- FDS6673BZ
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 14.5A 8SOIC
- Stock
- 51,057
- In Stock :
- 51,057
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- ECCN Code :
- EAR99
- Factory Lead Time :
- 18 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 14.5mA
- Rds On (Max) @ Id, Vgs :
- 7.8m Ω @ 14.5A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±25V
- Drain to Source Breakdown Voltage :
- -30V
- Rise Time :
- 16ns
- Gate to Source Voltage (Vgs) :
- 25V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 14 ns
- Drain to Source Voltage (Vdss) :
- 30V
- Turn-Off Delay Time :
- 225 ns
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Current - Continuous Drain (Id) @ 25°C :
- 14.5A Ta
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 7.8mOhm
- Number of Terminations :
- 8
- JESD-609 Code :
- e4
- Width :
- 4mm
- Height :
- 1.5mm
- Contact Plating :
- Tin
- Nominal Vgs :
- 1.9 V
- Published :
- 2009
- Number of Pins :
- 8
- Power Dissipation :
- 2.5W
- Feedback Cap-Max (Crss) :
- 900 pF
- Transistor Element Material :
- SILICON
- Length :
- 5mm
- FET Type :
- P-Channel
- Terminal Form :
- Gull wing
- Series :
- PowerTrench®
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 15V
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Fall Time (Typ) :
- 105 ns
- Lead Free :
- Lead Free
- Threshold Voltage :
- -1.9V
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 124nC @ 10V
- Weight :
- 130mg
- Power Dissipation-Max :
- 2.5W Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Datasheets
- FDS6673BZ
FDS6673BZ Documents

P-Channel Tape & Reel (TR) 7.8m Ω @ 14.5A, 10V ±25V 4700pF @ 15V 124nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
FDS6673BZ Description
FDS6673BZ P-Channel MOSFET was created with a distinctive PowerTrench technology that provides the most efficient RDS(on) together with an optimized BVDSS capability. FDS6673BZ MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDS6673BZ ON Semiconductor is a general-purpose device and can be used in a variety of applications.
FDS6673BZ Features
Extended VGS range for battery applications
HBM ESD protection
High performance trench technology for extremely low rDS(on)
High power and current handling capability
RoHS compliant
FDS6673BZ Applications
Control Switch
Synchronous & Non-Synchronous Buck
Load Switch
Inverter
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