FDS6673BZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Resistance :

7.8mOhm

Mount :

Surface Mount

Terminal Position :

Dual

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation-Max :

2.5W Ta

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

-30V

Mounting Type :

Surface Mount

Weight :

130mg

Rise Time :

16ns

Terminal Form :

Gull wing

Number of Pins :

8

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 15V

Turn On Delay Time :

14 ns

Nominal Vgs :

1.9 V

Transistor Element Material :

SILICON

Published :

2009

Factory Lead Time :

18 Weeks

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Vgs (Max) :

±25V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Threshold Voltage :

-1.9V

Continuous Drain Current (ID) :

14.5mA

Power Dissipation :

2.5W

Current - Continuous Drain (Id) @ 25°C :

14.5A Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

4mm

Element Configuration :

Single

Number of Terminations :

8

Series :

PowerTrench®

Height :

1.5mm

Gate to Source Voltage (Vgs) :

25V

Fall Time (Typ) :

105 ns

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

JESD-609 Code :

e4

Gate Charge (Qg) (Max) @ Vgs :

124nC @ 10V

Turn-Off Delay Time :

225 ns

Length :

5mm

Feedback Cap-Max (Crss) :

900 pF

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 14.5A, 10V

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Contact Plating :

Tin