FDS6672A
- Mfr.Part #
- FDS6672A
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 12.5A 8SOIC
- Stock
- 25,738
- In Stock :
- 25,738
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 12.5A
- Number of Terminations :
- 8
- Pbfree Code :
- yes
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Terminal Finish :
- MATTE TIN
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 4.5V
- Power Dissipation-Max :
- 2.5W Ta
- Pulsed Drain Current-Max (IDM) :
- 50A
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±12V
- Surface Mount :
- yes
- Pin Count :
- 8
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 14A, 10V
- DS Breakdown Voltage-Min :
- 30V
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Qualification Status :
- COMMERCIAL
- JESD-30 Code :
- R-PDSO-G8
- Series :
- PowerTrench®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.008Ohm
- Drain to Source Voltage (Vdss) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 12.5A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 5.07pF @ 15V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FDS6672A

N-Channel Tape & Reel (TR) 8m Ω @ 14A, 10V ±12V 5.07pF @ 15V 46nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
FDS6672A Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5.07pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12.5A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
FDS6672A Features
based on its rated peak drain current 50A.
a 30V drain to source voltage (Vdss)
FDS6672A Applications
There are a lot of Rochester Electronics, LLC
FDS6672A applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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