FDS6670AS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Turn-Off Delay Time :

27 ns

Mounting Type :

Surface Mount

Power Dissipation :

2.5W

Height :

1.5mm

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

9m Ω @ 13.5A, 10V

Width :

4mm

Fall Time (Typ) :

18 ns

Terminal Form :

Gull wing

Length :

5mm

Vgs (Max) :

±20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

1540pF @ 15V

Number of Terminations :

8

Turn On Delay Time :

10 ns

Radiation Hardening :

No

Current Rating :

13.5A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

2.5W Ta

Terminal Position :

Dual

Weight :

130mg

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Temperature :

-55°C~150°C TJ

Resistance :

9mOhm

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

13.5A Ta

JESD-609 Code :

e4

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Continuous Drain Current (ID) :

13.5A

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Factory Lead Time :

18 Weeks

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

30V

Number of Pins :

8

Transistor Element Material :

SILICON

Series :

PowerTrench®, SyncFET™

Vgs(th) (Max) @ Id :

3V @ 1mA

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Number of Elements :

1

Contact Plating :

Tin

Published :

2005

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Rise Time :

5ns