FDS6670A
- Mfr.Part #
- FDS6670A
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 13A 8SOIC
- Stock
- 2,373
- In Stock :
- 2,373
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 2.5W Ta
- Published :
- 2003
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rise Time :
- 13ns
- Width :
- 4mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 18 Weeks
- Element Configuration :
- Single
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Dual Supply Voltage :
- 30V
- Drain to Source Breakdown Voltage :
- 30V
- Lead Free :
- Lead Free
- Height :
- 1.5mm
- Voltage - Rated DC :
- 30V
- Terminal Position :
- Dual
- Weight :
- 130mg
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Mount :
- Surface Mount
- Current Rating :
- 13A
- Termination :
- SMD/SMT
- Length :
- 5mm
- Transistor Application :
- SWITCHING
- Number of Pins :
- 8
- Nominal Vgs :
- 1.8 V
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 13 ns
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 40 ns
- Series :
- PowerTrench®
- Continuous Drain Current (ID) :
- 13A
- Threshold Voltage :
- 1.8V
- Pbfree Code :
- yes
- JESD-609 Code :
- e4
- Resistance :
- 8mOhm
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta
- Turn On Delay Time :
- 15 ns
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 13A, 10V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2220pF @ 15V
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- FET Type :
- N-Channel
- Power Dissipation :
- 2.5W
- Datasheets
- FDS6670A
FDS6670A Documents

N-Channel Tape & Reel (TR) 8m Ω @ 13A, 10V ±20V 2220pF @ 15V 30nC @ 5V 8-SOIC (0.154, 3.90mm Width)
FDS6670A Description
FDS6670A N-Channel Logic Level MOSFET is made with a sophisticated PowerTrench process that has been specifically optimized to reduce on-state resistance while maintaining excellent switching performance. FDS6670A is ideal for low-voltage and battery-powered applications that demand little in-line power loss and quick switching.
FDS6670A Features
-
13 A, 30 V
-
RDS(ON) = 8 mΩ @ VGS = 10 V
-
RDS(ON) = 10 mΩ @ VGS = 4.5 V
-
Fast switching speed
-
Low gate charge
-
High power and current handling capability
-
High-performance trench technology for extremely low RDS(ON)
FDS6670A Applications
-
Switching
-
Low voltage and battery-powered applications
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