FDS6630A
- Mfr.Part #
- FDS6630A
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6.5A 8SOIC
- Stock
- 48,149
- In Stock :
- 48,149
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current Rating :
- 6.5A
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Number of Pins :
- 8
- Height :
- 1.575mm
- Turn On Delay Time :
- 5 ns
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Power Dissipation-Max :
- 2.5W Ta
- Resistance :
- 38mOhm
- Dual Supply Voltage :
- 30V
- Factory Lead Time :
- 18 Weeks
- Rds On (Max) @ Id, Vgs :
- 38m Ω @ 6.5A, 10V
- Transistor Element Material :
- SILICON
- Rise Time :
- 8ns
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Ta
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- 1.7V
- Published :
- 1999
- Turn-Off Delay Time :
- 17 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 15V
- Nominal Vgs :
- 1.7 V
- Fall Time (Typ) :
- 13 ns
- Number of Terminations :
- 8
- Series :
- PowerTrench®
- Power Dissipation :
- 2.5W
- Length :
- 4.9mm
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 7nC @ 5V
- Width :
- 3.9mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Voltage - Rated DC :
- 30V
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 6.5A
- Drain to Source Breakdown Voltage :
- 30V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Lead Free :
- Lead Free
- Weight :
- 130mg
- Datasheets
- FDS6630A
FDS6630A Documents

N-Channel Tape & Reel (TR) 38m Ω @ 6.5A, 10V ±20V 460pF @ 15V 7nC @ 5V 8-SOIC (0.154, 3.90mm Width)
FDS6630A Description
In order to reduce on-state resistance while maintaining exceptional switching performance, this N-Channel Logic Level MOSFET is made using the cutting-edge PowerTrench technology. Low in-line power loss and quick switching are required in low voltage and battery-powered applications, which are well suited for these devices.
FDS6630A Features
-
6.5 A, 30 V
-
RDS(on) = 0.038 Ω@ VGS = 10 V
-
RDS(on) = 0.053 Ω @ VGS = 4.5 V
-
Low gate charge (5nC typical)
-
Fast switching speed
-
High performance trench technology for extremely low RDS(ON)
-
High power and current handling capability
FDS6630A Applications
-
This product is general usage and suitable for many different applications.
-
DC/DC Converters
-
Load Switch
-
Motor Drives
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