FDS6630A

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Mfr.Part #
FDS6630A
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 6.5A 8SOIC
Stock
48,149
In Stock :
48,149

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
460pF @ 15V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Vgs (Max) :
±20V
Resistance :
38mOhm
Terminal Finish :
Tin (Sn)
Power Dissipation :
2.5W
Transistor Application :
SWITCHING
Rise Time :
8ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
1.575mm
Dual Supply Voltage :
30V
Current - Continuous Drain (Id) @ 25°C :
6.5A Ta
Factory Lead Time :
18 Weeks
Current Rating :
6.5A
Series :
PowerTrench®
Weight :
130mg
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
20V
Element Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
Published :
1999
Vgs(th) (Max) @ Id :
3V @ 250µA
REACH SVHC :
No SVHC
Rds On (Max) @ Id, Vgs :
38m Ω @ 6.5A, 10V
Power Dissipation-Max :
2.5W Ta
Packaging :
Tape and Reel (TR)
Width :
3.9mm
Number of Pins :
8
Additional Feature :
LOGIC LEVEL COMPATIBLE
Terminal Form :
Gull wing
Continuous Drain Current (ID) :
6.5A
Mounting Type :
Surface Mount
Mount :
Surface Mount
Number of Terminations :
8
Radiation Hardening :
No
Length :
4.9mm
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Nominal Vgs :
1.7 V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Terminal Position :
Dual
Fall Time (Typ) :
13 ns
Threshold Voltage :
1.7V
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
7nC @ 5V
FET Type :
N-Channel
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Turn-Off Delay Time :
17 ns
Number of Elements :
1
Drain to Source Breakdown Voltage :
30V
Turn On Delay Time :
5 ns
Voltage - Rated DC :
30V
Datasheets
FDS6630A
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS6630A from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Mounting Type:Surface Mount, Number of Terminations:8, Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), FDS6630A pinout, FDS6630A datasheet PDF, FDS6630A amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS6630A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS6630A


N-Channel Tape & Reel (TR) 38m Ω @ 6.5A, 10V ±20V 460pF @ 15V 7nC @ 5V 8-SOIC (0.154, 3.90mm Width)

FDS6630A Description


In order to reduce on-state resistance while maintaining exceptional switching performance, this N-Channel Logic Level MOSFET is made using the cutting-edge PowerTrench technology. Low in-line power loss and quick switching are required in low voltage and battery-powered applications, which are well suited for these devices.



FDS6630A Features


  • 6.5 A, 30 V

  • RDS(on) = 0.038 Ω@ VGS = 10 V

  • RDS(on) = 0.053 Ω @ VGS = 4.5 V

  • Low gate charge (5nC typical)

  • Fast switching speed

  • High performance trench technology for extremely low RDS(ON)

  • High power and current handling capability



FDS6630A Applications


  • This product is general usage and suitable for many different applications.

  • DC/DC Converters

  • Load Switch

  • Motor Drives


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