FDS6614A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

8

FET Type :

N-Channel

DS Breakdown Voltage-Min :

30V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.018Ohm

Drain to Source Voltage (Vdss) :

30V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1.16pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation-Max :

2.5W Ta

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs (Max) :

±20V

Series :

PowerTrench®

JESD-30 Code :

R-PDSO-G8

Terminal Form :

Gull wing

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

18m Ω @ 9.3A, 10V

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

9.3A Ta

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

9.3A

Mounting Type :

Surface Mount

Terminal Finish :

MATTE TIN

Qualification Status :

COMMERCIAL