FDS6614A

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.018Ohm

Peak Reflow Temperature (Cel) :

260

Additional Feature :

LOGIC LEVEL COMPATIBLE

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain Current-Max (Abs) (ID) :

9.3A

FET Type :

N-Channel

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

9.3A Ta

Input Capacitance (Ciss) (Max) @ Vds :

1.16pF @ 15V

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Number of Elements :

1

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Qualification Status :

COMMERCIAL

Pin Count :

8

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Series :

PowerTrench®

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

R-PDSO-G8

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

18m Ω @ 9.3A, 10V

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2.5W Ta