FDS6612A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

30V

Pbfree Code :

yes

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Lead Free :

Lead Free

Radiation Hardening :

No

Turn-Off Delay Time :

22 ns

Gate to Source Voltage (Vgs) :

20V

Termination :

SMD/SMT

Resistance :

22mOhm

Terminal Position :

Dual

Current Rating :

8.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

1.9V

Current - Continuous Drain (Id) @ 25°C :

8.4A Ta

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 15V

Mount :

Surface Mount

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.6nC @ 5V

Nominal Vgs :

1.9 V

Packaging :

Tape and Reel (TR)

Rise Time :

5ns

Vgs (Max) :

±20V

Series :

PowerTrench®

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e4

Power Dissipation-Max :

2.5W Ta

Fall Time (Typ) :

3 ns

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Weight :

130mg

Terminal Form :

Gull wing

Dual Supply Voltage :

30V

RoHS Status :

ROHS3 Compliant

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

22m Ω @ 8.4A, 10V

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Turn On Delay Time :

7 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation :

2.5W

Factory Lead Time :

18 Weeks

Continuous Drain Current (ID) :

8.4A

Transistor Application :

SWITCHING