FDS6609A
- Mfr.Part #
- FDS6609A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 6.3A 8SOIC
- Stock
- 25,453
- In Stock :
- 25,453
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 6.3A Ta
- Pbfree Code :
- yes
- Surface Mount :
- yes
- DS Breakdown Voltage-Min :
- 30V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- COMMERCIAL
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Pin Count :
- 8
- Drain Current-Max (Abs) (ID) :
- 6.3A
- Number of Terminations :
- 8
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 930pF @ 15V
- Drain-source On Resistance-Max :
- 0.032Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 30V
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Terminal Finish :
- MATTE TIN
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-G8
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 7A, 10V
- Power Dissipation-Max :
- 2.5W Ta
- Series :
- PowerTrench®
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Datasheets
- FDS6609A

P-Channel Tape & Reel (TR) 32m Ω @ 7A, 10V ±20V 930pF @ 15V 29nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
FDS6609A Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 930pF @ 15V.6.3A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
FDS6609A Features
a 30V drain to source voltage (Vdss)
FDS6609A Applications
There are a lot of Rochester Electronics, LLC
FDS6609A applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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