FDS6576

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Ta

Fall Time (Typ) :

79 ns

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Nominal Vgs :

-830 mV

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Contact Plating :

Tin

Element Configuration :

Single

Vgs (Max) :

±12V

Radiation Hardening :

No

Weight :

130mg

Power Dissipation :

2.5W

Gate to Source Voltage (Vgs) :

12V

Factory Lead Time :

18 Weeks

Operating Temperature :

-55°C~150°C TJ

Resistance :

14mOhm

Current Rating :

-11A

Rds On (Max) @ Id, Vgs :

14m Ω @ 11A, 4.5V

Voltage - Rated DC :

-20V

Continuous Drain Current (ID) :

11A

Length :

5mm

Series :

PowerTrench®

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Terminal Form :

Gull wing

Width :

4mm

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Threshold Voltage :

-830mV

Termination :

SMD/SMT

Pbfree Code :

yes

Transistor Element Material :

SILICON

FET Type :

P-Channel

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drain to Source Voltage (Vdss) :

20V

Number of Pins :

8

Height :

1.5mm

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Dual Supply Voltage :

-20V

Turn On Delay Time :

18 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

Rise Time :

17ns

JESD-609 Code :

e4

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Input Capacitance (Ciss) (Max) @ Vds :

4044pF @ 10V

Drain to Source Breakdown Voltage :

-20V

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Turn-Off Delay Time :

124 ns