FDS6576
- Mfr.Part #
- FDS6576
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 11A 8SOIC
- Stock
- 12,594
- In Stock :
- 12,594
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- -11A
- Published :
- 2006
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 4044pF @ 10V
- Drain to Source Breakdown Voltage :
- -20V
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 4.5V
- Factory Lead Time :
- 18 Weeks
- Turn-Off Delay Time :
- 124 ns
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- -20V
- Transistor Element Material :
- SILICON
- Series :
- PowerTrench®
- Power Dissipation-Max :
- 2.5W Ta
- Fall Time (Typ) :
- 79 ns
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta
- Termination :
- SMD/SMT
- ECCN Code :
- EAR99
- Rise Time :
- 17ns
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- FET Type :
- P-Channel
- Mounting Type :
- Surface Mount
- Weight :
- 130mg
- Drain to Source Voltage (Vdss) :
- 20V
- Continuous Drain Current (ID) :
- 11A
- Threshold Voltage :
- -830mV
- Mount :
- Surface Mount
- Height :
- 1.5mm
- Length :
- 5mm
- Contact Plating :
- Tin
- Resistance :
- 14mOhm
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e4
- Vgs (Max) :
- ±12V
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 8
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 11A, 4.5V
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Gate to Source Voltage (Vgs) :
- 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power Dissipation :
- 2.5W
- Nominal Vgs :
- -830 mV
- Width :
- 4mm
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Turn On Delay Time :
- 18 ns
- Dual Supply Voltage :
- -20V
- Datasheets
- FDS6576

P-Channel Tape & Reel (TR) 14m Ω @ 11A, 4.5V ±12V 4044pF @ 10V 60nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
FDS6576 Description
FDS6576 is a P-channel Power MOSFET from the manufacturer ON Semiconductor with a voltage of 20V. The operating temperature of FDS6576 is -55°C~150°C TJ and its maximum power dissipation are 2.5W. This P-Channel 2.5V specified MOSFET is in a rugged gate version of an advanced Power Trench? process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
FDS6576 Features
-
-11 A, -20 V.
-
RDS(ON) = 0.014 Ω @ VGS = -4.5 V
-
RDS(ON) = 0.020 Ω @ VGS = -2.5 V
-
Extended VGSS range (+-12V) for battery applications
-
Low gate charge (44nC typical)
-
Fast switching speed
-
High-performance trench technology for extremely low RDS(ON)
-
High power and current handling capability
-
RoHS Compliant
FDS6576 Applications
-
This product is general usage and suitable for many different applications.
-
Power Management
-
Load Switch
-
Battery Management
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