FDS6575

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

-10A

Input Capacitance (Ciss) (Max) @ Vds :

4951pF @ 10V

Drain to Source Voltage (Vdss) :

20V

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Power Dissipation :

2.5W

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

8V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

Rise Time :

9ns

Weight :

130mg

Factory Lead Time :

18 Weeks

Rds On (Max) @ Id, Vgs :

13m Ω @ 10A, 4.5V

Turn-Off Delay Time :

196 ns

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Radiation Hardening :

No

Series :

PowerTrench®

FET Type :

P-Channel

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 4.5V

Number of Terminations :

8

Mounting Type :

Surface Mount

Number of Elements :

1

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Operating Temperature :

-55°C~175°C TJ

Length :

5mm

Height :

1.5mm

Width :

4mm

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

ECCN Code :

EAR99

JESD-609 Code :

e4

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vgs (Max) :

±8V

Continuous Drain Current (ID) :

10A

Terminal Position :

Dual

Power Dissipation-Max :

2.5W Ta

Published :

2001

Resistance :

13mOhm

Turn On Delay Time :

16 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

-20V

Fall Time (Typ) :

78 ns

REACH SVHC :

No SVHC

Nominal Vgs :

-600 mV

Drain to Source Breakdown Voltage :

-20V