FDS6570A
- Mfr.Part #
- FDS6570A
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 15A 8SOIC
- Stock
- 9,910
- In Stock :
- 9,910
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Continuous Drain Current (ID) :
- 15A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Height :
- 1.5mm
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 8V
- Rise Time :
- 27ns
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 20V
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 15A Ta
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Series :
- PowerTrench®
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Turn-Off Delay Time :
- 95 ns
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Weight :
- 130mg
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 20V
- Vgs (Max) :
- ±8V
- Factory Lead Time :
- 18 Weeks
- Width :
- 4mm
- Number of Pins :
- 8
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 15A, 4.5V
- Current Rating :
- 15A
- Power Dissipation :
- 2.5W
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Length :
- 5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 66nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 10V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 20 ns
- Fall Time (Typ) :
- 35 ns
- Number of Terminations :
- 8
- Nominal Vgs :
- 900 mV
- Power Dissipation-Max :
- 2.5W Ta
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Datasheets
- FDS6570A
FDS6570A Documents

N-Channel Tape & Reel (TR) 7.5m Ω @ 15A, 4.5V ±8V 4700pF @ 10V 66nC @ 5V 8-SOIC (0.154, 3.90mm Width)
FDS6570A Description
This N-Channel 2.5V specified MOSFET is made utilizing the cutting-edge PowerTrench technology from ON Semiconductor, which has been carefully designed to reduce on-state resistance while maintaining exceptional switching performance. Low in-line power loss and quick switching are required in low voltage and battery-powered applications, which are well suited for these devices.
FDS6570A Features
-
Low gate charge (47nC typical).
-
Fast switching speed.
-
High performance trench technology for extremely low RDS(ON).
-
High power and current handling capability
FDS6570A Applications
-
DC/DC converter
-
Load switch
-
Battery protection
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