FDR6674A
- Mfr.Part #
- FDR6674A
- Manufacturer
- onsemi
- Package / Case
- 8-LSOP (0.130, 3.30mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11.5A SUPERSOT8
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 18 ns
- Series :
- PowerTrench®
- Power Dissipation :
- 1.8W
- Nominal Vgs :
- 1.2 V
- Turn-Off Delay Time :
- 69 ns
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 11.5A Ta
- Threshold Voltage :
- 1.2V
- RoHS Status :
- RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 9.5m Ω @ 10.5A, 4.5V
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 1.8W Ta
- Vgs (Max) :
- ±12V
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 4.5V
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 5070pF @ 15V
- Number of Pins :
- 8
- Voltage - Rated DC :
- 30V
- Current Rating :
- 11.5A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Published :
- 2001
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 8-LSOP (0.130, 3.30mm Width)
- Gate to Source Voltage (Vgs) :
- 12V
- Rise Time :
- 18ns
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 11.5A
- Drain to Source Breakdown Voltage :
- 30V
- Datasheets
- FDR6674A
FDR6674A Documents

N-Channel Tape & Reel (TR) 9.5m Ω @ 10.5A, 4.5V ±12V 5070pF @ 15V 46nC @ 4.5V 8-LSOP (0.130, 3.30mm Width)
FDR6674A Description
FDR6674A is a 30v N-Channel PowerTrench MOSFET. The N-Channel MOSFET FDR6674A has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for“low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
FDR6674A Features
-
11.5A, 30V RDS(ON) = 9.5mΩ, @VGS = 4.5V
RDS(ON) = 8.5mΩ, @VGS = 10V
-
High-performance trench technology for extremely low RDS(ON)
-
High power and current handling capability in a smaller footprint than SO8
-
Drain-Source Voltage: 30v
-
Gate-Source Voltage: ±12v
FDR6674A Applications
-
Cellular phones
-
Laptop computers
-
Photovoltaic systems
-
Wind turbines
-
Shunt voltage regulator and the series voltage regulator
-
Synchronous rectifier
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| Part | Manufacturer | Stock | Description |
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| FDR6580 | onsemi | 3,029 | MOSFET N-CH 20V 11.2A SUPERSOT8 |
















