FDR6580
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- Mfr.Part #
- FDR6580
- Manufacturer
- onsemi
- Package / Case
- 8-LSOP (0.130, 3.30mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 11.2A SUPERSOT8
- Stock
- 3,029
- In Stock ：
- 3,029
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 20V
- Package / Case :
- 8-LSOP (0.130, 3.30mm Width)
- FET Type :
- N-Channel
- Series :
- PowerTrench®
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 1.8W Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Mounting Type :
- Surface Mount
- Published :
- 1999
- Current - Continuous Drain (Id) @ 25°C :
- 11.2A Ta
- Rds On (Max) @ Id, Vgs :
- 9mOhm @ 11.2A, 4.5V
- Supplier Device Package :
- SuperSOT™-8
- Input Capacitance (Ciss) (Max) @ Vds :
- 3829pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 4.5V
- Vgs (Max) :
- ±8V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FDR6580
N-Channel Tape & Reel (TR) 9mOhm @ 11.2A, 4.5V ±8V 3829pF @ 10V 48nC @ 4.5V 20V 8-LSOP (0.130, 3.30mm Width)
FDR6580 Description
FDR6580 is a 2.5v N-Channel Specified PowerTrench? MOSFET. This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been specially tailored to minimize the on-state resistance and yet maintain a low gate charge for superior switching performance.
FDR6580 Features
-
11A, 20V.RDS(ON) = 0.009? @ VGS = 4.5 V
RDS(ON) = 0.013? @ VGS = 2.5 V
-
Low gate charge
-
High-performance trench technology for extremely low RDS(ON)
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Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.
FDR6580 Applications
-
Load switch
-
Motor driving
-
Power Management
-
Fan Motor Drives
-
Enterprise Copiers
-
Set-top Boxes
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FDR6674A | onsemi | 1 | MOSFET N-CH 30V 11.5A SUPERSOT8 |
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