FDMS9620S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

REACH SVHC :

No SVHC

Number of Elements :

2

Width :

6mm

Fall Time (Typ) :

7 ns

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

7.5A

Power - Max :

1W

ECCN Code :

EAR99

Lead Free :

Lead Free

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Weight :

228mg

Pbfree Code :

yes

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 250µA

Height :

750μm

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

665pF @ 15V

Threshold Voltage :

1.6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

2.5W

Radiation Hardening :

No

FET Feature :

Logic Level Gate

JESD-609 Code :

e4

Pulsed Drain Current-Max (IDM) :

60A

Turn-Off Delay Time :

27 ns

Series :

PowerTrench®

Rise Time :

13ns

Factory Lead Time :

16 Weeks

Number of Pins :

8

Power Dissipation :

2.5W

Length :

5mm

Package / Case :

8-PowerWDFN

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Element Configuration :

Dual

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

10A

Current - Continuous Drain (Id) @ 25°C :

7.5A 10A

Operating Mode :

ENHANCEMENT MODE

Resistance :

32mOhm

Rds On (Max) @ Id, Vgs :

21.5m Ω @ 7.5A, 10V

Published :

2007

FET Technology :

METAL-OXIDE SEMICONDUCTOR