FDMS8090
- Mfr.Part #
- FDMS8090
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 100V 10A PWR56
- Stock
- 652
- In Stock :
- 652
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Number of Terminations :
- 4
- Length :
- 5mm
- JESD-30 Code :
- R-PDSO-N4
- Drain-source On Resistance-Max :
- 0.013Ohm
- FET Type :
- 2 N-Channel (Dual)
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 10A, 10V
- Transistor Element Material :
- SILICON
- Published :
- 2017
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e4
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 40A
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- FET Feature :
- Logic Level Gate
- Number of Pins :
- 8
- Turn-Off Delay Time :
- 17.4 ns
- Series :
- PowerTrench®
- Factory Lead Time :
- 4 Weeks
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID) :
- 10A
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 2.2W
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-PowerWDFN
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Mount :
- Surface Mount
- Height :
- 750μm
- Turn On Delay Time :
- 10.6 ns
- Drain to Source Voltage (Vdss) :
- 100V
- Drain to Source Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 4 ns
- Number of Elements :
- 2
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Width :
- 6mm
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 50V
- Power Dissipation :
- 59W
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 4.6ns
- Weight :
- 250mg
- Element Configuration :
- Dual
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Datasheets
- FDMS8090
FDMS8090 Documents

FDMS8090 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMS8090 Description
This device includes two fast switching (Qgd minimized) 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package. The package is enhanced for exceptional thermal performance.
FDMS8090 Features
Max rDS(on) = 13 m|? at VGS = 10 V, ID = 10 A
Max rDS(on) = 20 m|? at VGS = 6 V, ID = 8 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
100% UIL tested
RoHS Compliant
FDMS8090 Applications
DC-DC Merchant Power Supply
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