FDMS7608S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

10 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power - Max :

1W

Packaging :

Tape and Reel (TR)

Published :

2017

Case Connection :

DRAIN SOURCE

Series :

PowerTrench®

Vgs(th) (Max) @ Id :

3V @ 250µA

Pbfree Code :

yes

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Turn-Off Delay Time :

20 ns

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Turn On Delay Time :

7 ns

Feedback Cap-Max (Crss) :

65 pF

Max Power Dissipation :

2.5W

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Drain Current-Max (Abs) (ID) :

30A

Height :

725μm

Current - Continuous Drain (Id) @ 25°C :

12A 15A

Rds On (Max) @ Id, Vgs :

10m Ω @ 12A, 10V

Resistance :

10MOhm

Number of Drivers :

2

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Output Voltage :

30V

Rise Time :

10ns

JESD-609 Code :

e4

Number of Elements :

2

Package / Case :

8-PowerWDFN

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

6

JESD-30 Code :

R-PDSO-N6

Width :

6mm

Input Capacitance (Ciss) (Max) @ Vds :

1510pF @ 15V

FET Type :

2 N-Channel (Dual)

Output Current :

22A

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Continuous Drain Current (ID) :

15A

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Weight :

226mg

Factory Lead Time :

16 Weeks

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Transistor Application :

SWITCHING

Length :

5mm

Radiation Hardening :

No